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Partno Mfg Dc Qty AvailableDescript
BBY53-02V |BBY5302VINFINEONN/a15000avaiVaractordiodes


BBY53-02V ,VaractordiodesBBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BBY53-02W ,Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)BBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BBY53-03W ,VaractordiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY53-05W ,VaractordiodesBBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BBY55-02V ,VaractordiodesBBY55...Silicon Tuning Diodes

BBY53-02V
Varactordiodes
BBY53...
Silicon Tuning Diode

• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03LBBY53
BBY53-05W

* Preliminary
Maximum Ratings at T
A = 25°C, unless otherwise specified
BBY53...
Electrical Characteristics at T
A = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BBY53...
Diode capacitance C
T = ƒ (VR)
f = 1MHz
0.4
0.8
1.2
1.6
2.4
2.8
3.2
3.6
4.4
4.8
5.2
5.6
6.4
6.8
7.2
7.6
8.4
Capacitance change ∆C = ƒ(T
A)
f = 1 MHz
-3.75
-3
-2.25
-1.5
-0.75
0.75
1.5
2.25
3.75
5.25
Temperature coefficient of the diode
capacitance TC
C = ƒ (VR)
f = 1 MHz
-4 10
-3 10
-2 10
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