BAY73 ,High Conductance Fast DiodeBAY73 Small Signal DiodeJanuary 2005BAY73Small Signal DiodeDO-35Color Band Denotes CathodeAbsolute ..
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BAY73
High Conductance Fast Diode
BAY73 Small Signal Diode January 2005 BAY73 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 125 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 100μA 125 V R R V Forward Voltage I = 1mA 0.60 0.68 V F F I = 5mA 0.67 0.75 V F I = 10mA 0.69 0.80 V F I = 50mA 0.78 0.88 V F I = 100mA 0.81 0.94 V F I = 200mA 0.85 1.0 V F I Reverse Leakage V = 100V 5 nA R R V = 100V, T = 125°C 1 μA R A V = 20V, T = 125°C 500 nA R A C Total Capacitance V = 0, f = 1.0MHz 8 pF T R t Reverse Recovery Time I = I = 30mA, I = 3mA, R = 100Ω 1.0 μs rr F R rr L ©2005 1 BAY73 Rev. B
