| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAW56E6433 |
INFEON|Infineon |
N/a |
80000 |
 |
|
BAW56-GS08 , Small Signal Switching Diode, Dual
BAW56LT1 ,Small Signal AnodeTHERMAL CHARACTERISTICSCATHODECharacteristic Symbol Max UnitMARKINGTotal Device Dissipation FR−5 Bo ..
BAW56LT3 ,Small Signal AnodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)ACharacteristic Symbol Min ..
BAW56LT3G , Dual Switching Diode Common Anode
BAW56S ,General Purpose DiodesLimiting valuesTable 6.
BD537. , 50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.BD533 BD535 BD537BD534 BD536 BD538®COMPLEMENTARY SILICON POWER TRANSISTORS■ BD534, BD535, BD536, BD ..
BD537J ,NPN Epitaxial Silicon TransistorBD533/535/537BD533/535/537Medium Power Linear and Switching
BD5421EFS , Stereo Class-D Power Amplifier for Speaker
