| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAW56DW-7 |
DIODES |
N/a |
60000 |
 |
|
BAW56-GS08 , Small Signal Switching Diode, Dual
BAW56LT1 ,Small Signal AnodeTHERMAL CHARACTERISTICSCATHODECharacteristic Symbol Max UnitMARKINGTotal Device Dissipation FR−5 Bo ..
BAW56LT3 ,Small Signal AnodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)ACharacteristic Symbol Min ..
BAW56LT3G , Dual Switching Diode Common Anode
BAW56S ,General Purpose DiodesLimiting valuesTable 6.
BD534J ,PNP Epitaxial Silicon TransistorApplications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectivelyTO-22011.Ba ..
BD535 , 50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE.BD533 BD535 BD537BD534 BD536 BD538®COMPLEMENTARY SILICON POWER TRANSISTORS■ BD534, BD535, BD536, BD ..
BD535 , 50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE.
