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BAW101SNXPN/a5087avaiHigh voltage double diode


BAW101S ,High voltage double diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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BAW101S
High voltage double diode

NXP Semiconductors Product data sheet
High voltage double diode BAW101S
FEATURES
Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes.
APPLICATIONS
High voltage switching Automotive Communication.
DESCRIPTION

The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
MARKING
Note
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.
Note
Pulse test: pulse width = 300 µs; δ = 0.02.
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
THERMAL CHARACTERISTICS
Notes
One or more diodes loaded. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
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