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BAW100 Fast Delivery,Good Price
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BAW100INFINEONN/a22avaiSilicon Switching Diode Array for hig...
BAW100CENTRALN/a3000avaiSilicon Switching Diode Array for hig...


BAW100 ,Silicon Switching Diode Array for hig...characteristicsBreakdown voltage 85 - - VV(BR)I = 100 µA(BR)Forward voltage mVVFI = 1 mA - - 715 ..
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BAW100
Silicon Switching Diode Array for hig...
BAW 100
Silicon Switching Diode Array

• For high-speed switching applications
• Electrical insulated diodes
EHA000064
Maximum Ratings
Thermal Resistance
BAW 100
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Test circuit for reverse recovery time

EHN00019
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50Ω
Oscillograph: R = 50Ω, tr = 0.35ns,
C ≤ 1pF
BAW 100
Reverse current I
EHB00141
25V150100
150˚C
Forward current I

* Package mounted on epoxy0T;TS100˚C150
Forward current IF = f (VF)A = 25°C0
Peak forward current IFM = f (tp)A = 25°CΙ
EHB00143
BAW 100
Forward voltage V

1.050100150AF
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