BAV756S ,High-speed switching diode arrayLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BAV756S ,High-speed switching diode arrayFeaturesn High switching speed: t ≤4ns n Low capacitance: C ≤2pFrr dn Low leakage current n Reverse ..
BAV756S ,High-speed switching diode arrayBAV756S; BAW56 seriesHigh-speed switching diodesRev. 05 — 26 November 2007 Product data sheet1. Pro ..
BAV756S ,High-speed switching diode arrayApplicationsn High-speed switchingn General-purpose switching1.4 Quick reference dataTable 2. Quick ..
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BAV756S
High-speed switching diode array
Philips Semiconductors Product specification
High-speed switching diode array BAV756S
FEATURES Small plastic SMD package High switching speed: max.4ns Continuous reverse voltage:
max.75V Repetitive peak reverse voltage:
max.85V Repetitive peak forward current:
max. 450 mA.
APPLICATIONS General purpose switching in e.g.
surface mounted circuits.
DESCRIPTIONThe BAV756S consists of four
high-speed switching diodes
fabricated in planar technology, and
encapsulated in the small SMD
SOT363 plastic package. One pair of
diodes has a common cathode; the
other pair has a common anode.
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note One or more diodes loaded.
Philips Semiconductors Product specification
High-speed switching diode array BAV756S
ELECTRICAL CHARACTERISTICS =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note One or more diodes loaded.
Philips Semiconductors Product specification
High-speed switching diode array BAV756S
GRAPHICAL DATA
Philips Semiconductors Product specification
High-speed switching diode array BAV756S
Philips Semiconductors Product specification
High-speed switching diode array BAV756S
