| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAV70ST |
ST|ST Microelectronics |
N/a |
3000 |
 |
|
BAV70T ,Switching DiodesTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit21Total Device Dissipation, PD(1)FR−4 Board 22 ..
BAV70T-7-F , SURFACE MOUNT FAST SWITCHING DIODE
BAV70TT1 ,Dual Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BAV70U ,General Purpose DiodesCharacteristicsBreakdown voltage V 85 - - V(BR)I = 100 µA(BR)Reverse current I µARV = 70 V - - 0. ..
BAV70W ,Switching DiodesTHERMAL CHARACTERISTICS2Characteristic Symbol Max Unit12A4 = Specific Device CodeTotal Device Dissi ..
BD434 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
BD434 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
BD434 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
