BAV70LT1 ,Monolithic Dual Switching Diode Common Cathode2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENTμ (A)RBAV70LT1INFORMATION F ..
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BAV70M ,High-speed switching diodesGeneral descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)p ..
BAV70PT , SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere
BAV70S ,High-speed double diode arrayLimiting valuesTable 6.
BAV70T ,Switching DiodesTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit21Total Device Dissipation, PD(1)FR−4 Board 22 ..
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BD433 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
BD434 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
BD434 ,Leaded Power Transistor General PurposeBD433/5/7BD434/6/8®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE■ ..
BAV70LT1
Small Signal Common Cathode
Monolithic Dual Switching Diode
Common Cathode
MAXIMUM RATINGS (EACH DIODE)
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
OFF CHARACTERISTICS FR–5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina.
3. For each individual diode while second diode is unbiased.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.CATHODE
ANODE
ANODE
