Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BAT64 E-6327 |
INFINEON|Infineon |
N/a |
8630 |
|
|
BAT64-02V ,Silicon Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesBAT64...Silicon Schottky Diodes• For low-loss, fast-recovery, meter protection, bias isolation an ..
BAT64-02W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-04 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-04E6327 , Silicon Schottky Diodes
BD238 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..