Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BAT64-05/65S |
LNFINEON |
N/a |
90000 |
|
|
BAT64-06 ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-06W ,Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-07 ,Silicon Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-07 E6327 ,Silicon AF Schottky Diodeapplications• Integrated diffused guard ring4• Low forward voltage21VPS051784 132EHA07008ESD: Elect ..
BAT64W , Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
BD241BFP ,COMPLEMENTARY SILICON POWER TRANSISTORSAPPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENE ..
BD241BTU ,NPN Epitaxial Silicon TransistorApplications Complement to BD242/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD241C ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..