| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAT62E6327 |
INFINEON|Infineon |
N/a |
2500 |
 |
|
BAT63 ,Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesBAT64...Silicon Schottky Diodes• For low-loss, fast-recovery, meter protection, bias isolation an ..
BD237 ,Leaded Power Transistor General PurposeMAXIMUM RATINGSÎÎÎÎÎ80 VOLTSRating Symbol Value UnitÎÎÎÎÎÎ25 WATTSCollector−Emitter Voltage V 80 Vd ..
BD238 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
