BAT54CWT1G ,Schottky Barrier diodeBAT54SWT1G/BAT54CWT1G Schottky DiodesApril 2005BAT54SWT1G/BAT54CWT1GSchottky DiodesConnection Diag ..
BAT54DW-7-F , DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT54FILM ,SMALL SIGNAL SCHOTTKY DIODEBAT54, A, C, S®SMALL SIGNAL SCHOTTKY DIODE
BAT54-GS08 ,Small Signal Schottky Diodes, Single DualFeatures • These diodes feature very low turn-on voltage and fast switching. These devices are pr ..
BAT54H ,Schottky barrier single diode in small SOD123F packageTHERMAL CHARACTERISTICS1JVCharacteristic Symbol Max Unit1 22Total Device Dissipation FR–5 Board, P ..
BAT54HT1 ,SURFACE MOUNT SCHOTTKY BARRIER DIODESELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCX71G ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS
BCX71G ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORSRev. 1.2, 19-Aug-04 31.43 (.056)1.20(.047)1.15 (.045)0.95 (.037)BCX71 SeriesVISHAYVishay Semiconduc ..
BCX71G ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS
BCX71G ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS
BCX71G ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS
BCX71H ,PNP general purpose transistorsRev. 1.2, 19-Aug-04 1BCX71 SeriesVISHAYVishay SemiconductorsElectrical DC CharacteristicsParameter ..
BAT54CWT1G
Schottky Barrier diode
BAT54SWT1G/BAT54CWT1G Schottky Diodes April 2005 BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G BAT54CWT1G 3 3 3 12 1 2 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current 600 mA FSM Pulse Width = 1.0 second T Storage Temperature Range -65 to +125 °C STG T Operating Junction Temperature -65 to +125 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 232 mW D R Thermal Resistance, Junction to Ambient 430 °C/W θJA FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max. Units V Breakdown Voltage I = 10µA30 V R R V Forward Voltage I = 0.1mA 240 mV F F I = 1mA 320 mV F I = 10mA 400 mV F I = 30mA 500 mV F I = 100mA 0.8 V F I Reverse Leakage V = 25V 2 µA R R C Total Capacitance V = 1V, f = 1.0MHz 10 pF T R t Reverse Recovery Time I = I = 10mA, I = 1.0mA, 5.0 ns rr F R RR R = 100Ω L ©2005 1 BAT54SWT1G/BAT54CWT1G Rev. A
