BAT15-03W ,Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BAT15-04 , Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
BAT15V-02V ,Schottky DiodesRev. 1.1, 27-Apr-04 30.3 (0.012)0.15 (0.006)0.6 (0.023)BAT15V-02VVISHAYVishay SemiconductorsOzone D ..
BAT160A ,Schottky barrier double diodesAPPLICATIONSconfiguration (symbol).• Low power switched-mode powersuppliesage 4• Rectification4• Po ..
BAT160A ,Schottky barrier double diodes
BAT160S ,Schottky barrier double diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCW65C ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66 ,NPN Low Sat Transistor
BCW66 ,NPN Low Sat TransistorBCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EHn SILICON EPITAXIALPLANAR N ..
BCW66F ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66G ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsDC current gain 1) -hFEI = 500 mA, V = 2 V h -grp.A/F - 35 -C CE FEh -grp.B/G - ..
BCW66GLT1 ,General Purpose NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BAT15-03W
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
