BAS70LT1 ,Schottky Diode2I , FORWARD CURRENT (mA)FC , CAPACITANCE (pF)TI , REVERSE CURRENT (μA)RBAS70LT1PACKAGE DIMENSIONSS ..
BAS70LT1G , Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage
BAS70-TP , Surface Mount Schottky Barrier Diode 200 mWatt
BAS70W ,Schottky barrier (double) diodesELECTRICAL CHARACTERISTICST =25°C unless otherwise specified.ambSYMBOL PARAMETER CONDITIONS MAX. UNI ..
BAS70W ,Schottky barrier (double) diodesBAS70J / BAS70WBAS70-04W /BAS70-05W / BAS70-06WSMALL SIGNAL SCHOTTKY DIODE
BAS70W ,Schottky barrier (double) diodesAPPLICATIONSFig.3 BAS70-04W diodehandbook, 2 columns3 configuration (symbol).• Ultra high-speed swi ..
BCW60BLT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BCW60D ,NPN EPITAXIAL SILICON TRANSISTORRev. 1.2, 19-Aug-04 1BCW60 SeriesVISHAYVishay SemiconductorsElectrical DC CharacteristicsParameter ..
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BAS70LT1
Schottky Diode
BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features Pb−Free Package is Available Extremely Fast Switching Speed Low Forward Voltage
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
