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BAS21VD
High-voltage switching diodes
BAS21VDHigh-voltage switching diodes
1 August 2013 Product data sheet General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) smallSurface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 50 ns• Low capacitance: Cd ≤ 5 pF• Reverse voltage: VR ≤ 200 V• AEC-Q101 qualified• Repetitive peak reverse voltage: VRRM ≤ 250 V• Repetitive peak forward current: IFRM ≤ 1 A• Small SMD plastic package Applications High-voltage switching in surface-mounted circuits• Automotive• Communication Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode forward current pulsed; tp ≤ 300 µs; δ ≤ 0.02 [1] - - 200 mA reverse voltage - - 200 V
Per diode reverse current VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 25 100 nA
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
NXP Semiconductors BAS21VD
High-voltage switching diodes Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K1 cathode (diode 1) K2 cathode (diode 2) K3 cathode (diode 3) A3 anode (diode 3) A2 anode (diode 2) A1 anode (diode 1) 3256
TSOP6 (SOT457)
006aab241 3 4 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAS21VD TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 Marking
Table 4. Marking codes
Type number Marking code
BAS21VD B5 Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse voltage - 250 V reverse voltage - 200 V forward current pulsed; tp ≤ 300 µs; δ ≤ 0.02 [1] - 200 mA
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 25 % - 1 A
tp = 10 µs; Tj(init) = 25 °C; square wave - 16 A
tp = 100 µs; Tj(init) = 25 °C; square wave - 8 A
IFSM non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; square wave - 2 A
NXP Semiconductors BAS21VD
High-voltage switching diodes
Symbol Parameter Conditions Min Max Unit
Per device; one diode loaded
[1] - 250 mWPtot total power dissipation Tamb ≤ 25 °C
[2] - 295 mW
Tstg storage temperature -65 150 °C junction temperature - 150 °C
Tamb ambient temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; one diode loaded
[1] - - 500 K/WRth(j-a) thermal resistancefrom junction to
ambient
in free air
[2] - - 425 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint
[3] - - 140 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.[3] Soldering point of cathode tab.
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IF = 100 mA; Tamb = 25 °C - - 1 VVF forward voltage
IF = 200 mA; Tamb = 25 °C - - 1.25 V
VR = 200 V; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C 25 100 nAIR reverse current
VR = 200 V; Tj = 150 °C - - 100 µA diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.6 5 pF
trr reverse recovery time IF = 30 mA; IR = 30 mA; Tamb = 25 °C;
RL = 100 Ω; IR(meas) = 3 mA 16 50 ns
NXP Semiconductors BAS21VD
High-voltage switching diodes
(mA)
mbg384 21 VF(V)
(1) (3)(2)
(1) Tj = 150 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig. 1. Forward current as a function of forward
voltage 10 103102
104 1051
mle165 (µA)
IFSM(A)
Based on square wave currents.
Tj(init) = 25 °C
Fig. 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg381
2000 100 Tj (°C)
(µA)
(1) (2) 10 VR(V)(pF) 40
mle166
f = 1 MHz; Tj = 25 °C
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values
NXP Semiconductors BAS21VD
High-voltage switching diodes 50 100 200(V)
mle167
Tamb(°C)
FR4 PCB, standard footprint
Fig. 5. Reverse voltage as a function of ambienttemperature; derating curve
mbg442 100 200Tamb (°C)
(mA)
FR4 PCB, standard footprint
Fig. 6. Forward current as a function of ambient
temperature; derating curve
11. Test information
trr
(1)IF
output signal tp t%%VR
input signal=VR+IF ×RS=50Ω IF
D.U.T.=50Ω
SAMPLINGOSCILLOSCOPE
mga881
(1) IR = 3 mA
Fig. 7. Reverse recovery time test circuit and waveforms
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
NXP Semiconductors BAS21VD
High-voltage switching diodes
12. Package outline
04-11-08Dimensionsinmm
3.02.5 1.71.3
pin1 index
0.60.2 3256
Fig. 8. Package outline TSOP6 (SOT457)
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot457_fr
0.45(6×)
0.55(6×)
0.7(6×)
0.8(6×)
Dimensionsinmm
Fig. 9. Reflow soldering footprint for TSOP6 (SOT457)

Partno	Mfg	Dc	Qty	Available	Descript
BAS21VD	NXP	N/a	30000	avai	High-voltage switching diodes