| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAS16 E6393 |
INFINEON|Infineon |
N/a |
3000 |
 |
|
BAS16-02L ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02V ,Diodes for high speed switching applicationsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02W ,General Purpose DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-03W ,General Purpose DiodesBAS16...Silicon Switching Diode• For high-speed switching
BAS16-07L4 ,Diodes for high speed switching applicationsapplicationsBAS16 BAS16-02L BAS16S BAS16-07L4BAS16W BAS16-02V BAS16UBAS16-02WBAS16-03W ..
BCR12PM , MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM , MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR133 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
