| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAS16 E6327 |
INFINEON|Infineon |
N/a |
13740 |
 |
For high-speed switching applications |
BAS16 E6393 INFINEON
BAS16 E-6393 SIEMENS
BAS16 T/R PANJIT
BAS16 T116 ROHM
BAS16(5D) KEXIN
BAS16(5D.) ZX
BAS16(A6) VISHAY
BAS16(A6t) PHILIPS
BAS16(RA6) ROHM
BAS16-(TX) PANASONI
BAS16，215 NXP
BAS16.215 NXP, High-speed switching diodes
BAS16/A6T PHIL
BAS16/T3 NXP
BAS16/Y PHILIPS
BAS16_NL FAIRCHILD
BAS16_NL FAIRCHIL
BAS16 E6327 , For high-speed switching applications
BAS16-02L ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02V ,Diodes for high speed switching applicationsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02W ,General Purpose DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-03W ,General Purpose DiodesBAS16...Silicon Switching Diode• For high-speed switching
BCR12PM , MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM , MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR133 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
