| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAS16/A6T |
PHIL|Philips |
N/a |
30000 |
 |
|
BAS16-02L ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02V ,Diodes for high speed switching applicationsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-02W ,General Purpose DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS16-03W ,General Purpose DiodesBAS16...Silicon Switching Diode• For high-speed switching
BAS16-07L4 ,Diodes for high speed switching applicationsapplicationsBAS16 BAS16-02L BAS16S BAS16-07L4BAS16W BAS16-02V BAS16UBAS16-02WBAS16-03W ..
BCR133F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR133.../SEMH11NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, ..
BCR133F E6327 ,Digital TransistorsBCR133...NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, drive ..
BCR133FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
