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BAR80INFINEONN/a40000avaiSilicon RF Switching Diode


BAR80 ,Silicon RF Switching DiodeCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
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BAR80
Silicon RF Switching Diode
BAR80
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
Maximum Ratings
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Application information
Configuration of the shunt-diode

- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
BAR80
Forward current I
F = f (TS)
20
40
60
80
100
120
160
Permissible Pulse Load R
thJS = f(tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load
Fmax / IFDC = f(tp) 0 10 10 10
Fmax
FDC
BAR80
Forward resistance r

f = 100MHzfΙ010110210mA1010
Diode capacitance C

f = 1MHz0.0
EHD07009V20V30
0.4
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