| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BAR64 E6327 |
INFINEON|Infineon |
N/a |
332490 |
 |
|
| BAR64 E6327 |
SIEMENS |
N/a |
2370 |
|
|
BAR64-02V ,PIN DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAR64-03W ,Silicon PIN DiodeCharacteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-04 ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)Characteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-04W ,PIN DiodesCharacteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-05 ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)Characteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BCP68T1 ,MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP68T1G , NPN Silicon Epitaxial Transistor
BCP68T1G , NPN Silicon Epitaxial Transistor
