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BAR64-02V-BAR64-03W-BAR64-04W-BAR64-05W-BAR64-06W Fast Delivery,Good Price
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BAR64-02V |BAR6402VINFINEONN/a5600avaiPIN Diodes
BAR64-03W |BAR6403WINFINEONN/a57000avaiSilicon PIN Diode
BAR64-04W |BAR6404WINFINEONN/a6000avaiPIN Diodes
BAR64-05W |BAR6405WINFINEONN/a5000avaiSilicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-05W |BAR6405WINFN/a30000avaiSilicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-05W |BAR6405W西门子N/a21000avaiSilicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-06W |BAR6406WInfineonN/a9000avaiSilicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-07 |BAR6407INFINEONN/a30000avaiSilicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)


BAR64-03W ,Silicon PIN DiodeCharacteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-04 ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)Characteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-04W ,PIN DiodesCharacteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-05 ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)Characteristics150 - - VBreakdown voltage V(BR)I = 5 µA(BR)- - 1.1Forward voltage VFI = 50 mAF1For ..
BAR64-05W ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)BAR64...Silicon PIN Diode

BAR64-02V-BAR64-03W-BAR64-04W-BAR64-05W-BAR64-06W-BAR64-07
PIN Diodes
BAR64...
Silicon PIN Diode
High voltage current controlled RF resistor
for RF attenuator and switches Frequency range above 1 MHz up to 6 GHz Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF) Low forward resistance (typ. 2.1 @ 10 mA) Very low signal distortion
BAR64-02L
BAR64-02V
BAR64-03W
BAR64-07BAR64-04
BAR64-04T
BAR64-04W
BAR64-06
BAR64-06W
BAR64-05
BAR64-05W

* Preliminary Data
BAR64...
Maximum Ratings at T
A = 25°C, unless otherwise specified
Thermal Resistance
Electrical Characteristics at T
A = 25°C, unless otherwise specified
DC Characteristics
For calculation of RthJA please refer to Application Note Thermal Resistance
BAR64...
AC Characteristics

1BAR64-02L in series configuration, Z = 50
BAR64...
Diode capacitance C
T = (VR)
f = Parameter
0.1
0.2
0.3
0.4
0.5
0.7
Reverse parallel resistance R
P = (VR)
f = Parameter
-1 10 10 10 10 10 10
Forward resistance r
f = (IF)
f = 100MHz
10 2
-1 10 10 10 10 10
Forward current I
F = (VF)A = Parameter
-6 10
-5 10
-4 10
-3 10
-2 10
-1 10
BAR64...
Intermodulation intercept point
3 = (IF); f = Parameter
10 1 10 10
Forward current I
F = (TS)
BAR64-02L
10
20
30
40
50
60
70
80
90
100
120
Forward current I
F = (TS)
BAR64-02V
10
20
30
40
50
60
70
80
90
100
120
Forward current I
F = (TS)
BAR64-04, BAR64-06
10
20
30
40
50
60
70
80
90
100
120
BAR64...
Forward current I
F = (TS)
BAR64-04T
10
20
30
40
50
60
70
80
90
100
120
Permissible Puls Load R
thJS = (tp)
BAR64-02L
10 0
-1 10 10 10 10
thJS
Permissible Pulse Load
Fmax/ IFDC = (tp)
BAR64-02L
10 0 10 10 10
Fmax
FDC
Permissible Puls Load R
thJS = (tp)
BAR64-02V
10 0
-1 10 10 10 10 10
thJS
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