BAR43FILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43S ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43SFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BCP54-10 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BCP54C B60 - ..
BCP5416 ,General Purpose TransistorsBCP54...BCP56NPN Silicon AF Transistors
BAR42FILM-BAR43AFILM-BAR43CFILM-BAR43FILM-BAR43SFILM
SMALL SIGNAL SCHOTTKY DIODES
BAR42FILM
BAR43/A/C/SFILMSMALL SIGNAL SCHOTTKY DIODES
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
ABSOLUTE RATINGS (limiting values)
* : dPtot
dTj Rthj a< − thermal runaway condition for a diode on its own heatsink
* Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCEGeneral purpose metalto silicon diodes featuring
very low turn-on voltage and fast switching.
DESCRIPTION
BAR42FILM BAR43/A/C/SFILM
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS0.00 0.050.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
IFM(A)
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level). 0.1
5E-1
IFM(A)
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
Pulse test:*tp= 380μs,δ < 2%tp=5 ms,δ <2%
* Detection effeciency
BAR42FILM BAR43/A/C/SFILM1E-2
1E-1
1E+0
1E+1
1E+2
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25
1E+1
1E+2
1E+3
1E+4
IR(μA)
Fig.3: Reverse leakage current versus junction
temperature.1
C(pF)
Fig. 4:voltage applied (typical values). 1E-2
Zth(j-a)/Rth(j-a)5: Relativeto ambient with recommendedpad150
Rth(j-a) (°C/W)
Fig.
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm).
BAR42FILM BAR43/A/C/SFILM
PACKAGE MECHANICAL DATASOT-23 (Plastic)
Informationfurnishedis believedtobe accurateandreliable. However,STMicroelectronics assumesno responsibility fortheconsequencesof
useof suchinformation norforanyinfringementof patents orother rights ofthird parties whichmayresult fromits use.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://
FOOT PRINT DIMENSIONSEpoxy meets UL94,V0
:
www.ic-phoenix.com
.
