| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BA1960 |
YGNAC |
N/a |
1576 |
 |
|
BA1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1A3Qon-chip resistor NPN silicon epitaxial transistorFor mid-speed ..
BA1A4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC . . MAX.
NPN SILICON TRANSISTOR ..
BA1A4P ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Input Resistance
Input Resistance
..
BA1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BA1F4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
CHARACTERISTIC
NPN SILICON TRANSISTOR
BA1 ..
BC848CW ,Bipolar Transistors3C, CAPACITANCE (pF)V , COLLECTOR-EMITTER VOLTAGE (V) h , NORMALIZED DC CURRENT GAINCE FEV, VOLTAGE ..
BC848CW ,Bipolar TransistorsThese transistors are designed for general purpose amplifierapplications. They are housed in the SC ..
BC848CWT1 ,CASE 419-02, STYLE 3 SOT-323/SC-70MAXIMUM RATINGS3Rating Symbol Value UnitSC−70/SOT−323CASE 419Collector-Emitter Voltage V VCEO1 STYL ..
