| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BA1901FV-E2 |
|
N/a |
1073 |
 |
|
BA1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1A3Qon-chip resistor NPN silicon epitaxial transistorFor mid-speed ..
BA1A4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC . . MAX.
NPN SILICON TRANSISTOR ..
BA1A4P ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Input Resistance
Input Resistance
..
BA1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BA1F4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
CHARACTERISTIC
NPN SILICON TRANSISTOR
BA1 ..
BC848CW ,Bipolar TransistorsThese transistors are designed for general purpose amplifierapplications. They are housed in the SC ..
BC848CW ,Bipolar Transistors
BC848CW ,Bipolar Transistors3C, CAPACITANCE (pF)V , COLLECTOR-EMITTER VOLTAGE (V) h , NORMALIZED DC CURRENT GAINCE FEV, VOLTAGE ..
