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ATF-58143-TR1 from AGILENT, Agilent (Hewlett-Packard) 12000pcs , SOT-343 , Alternate PN:ATF58143TR1,Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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ATF-58143-TR1 AGILENT N/a 12000
Electrical SpecificationsT = 25°C, RF parameters measured in a test circuit for a typical deviceA[2]Symbol Parameter and Test Condition Units Min. Typ. Max.Vgs Operational Gate Voltage Vds = 3V, Ids = 30 mA V 0.4 0.51 0.75Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52Idss Saturated Drain Current Vds = 3V, Vgs = 0V µA— 1 5Gm Transconductance Vds = 3V, gm = ∆Idss/∆Vgs; mmho 230 410 560∆Vgs = 0.75 – 0.7 = 0.05VIgss Gate Leakage Current Vgd = Vgs = -3V µA — — 200[1]NF Noise Figure f = 2 GHz Vds = 3V, Ids = 30 mA dB — 0.5 0.9f = 900 MHz Vds = 3V, Ids = 30 mA dB — 0.3 —f = 2 GHz Vds = 4V, Ids = 30 mA dB — 0.5 —f = 900 MHz Vds = 4V, Ids = 30 mA dB — 0.3 —[1]Ga Associated Gain f = 2 GHz Vds = 3V, Ids = 30 mA dB 15 16.5 18.5f = 900 MHz Vds = 3V, Ids = 30 mA dB — 23.1 —f = 2 GHz Vds = 4V, Ids = 30 mA dB — 17.7 —f = 900 MHz Vds = 4V, Ids = 30 mA dB — 22.5 —rdOIP3 Output 3 Order f = 2 GHz Vds = 3V, Ids = 30 mA dBm 29 30.5 —[1]Intercept Point f = 900 MHz Vds = 3V, Ids = 30 mA dBm — 28.6 —f = 2 GHz Vds = 4V, Ids = 30 mA dBm — 31.5 —f = 900 MHz Vds = 4V, Ids = 30 mA dBm — 31.0 —P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 30 mA dBm — 19 —[1]Output Power f = 900 MHz Vds = 3V, Ids = 30 mA dBm — 18 —f = 2 GHz Vds = 4V, Ids = 30 mA dBm — 21 —f = 900 MHz Vds = 4V, Ids = 30 mA dBm — 19 —Notes:1. Measurements obtained using production test board described in Figure 5.2. Typical values determined from a sample size of 500 parts from 3 wafers.28.2 + j9.4 51 – j3.3output RFoutmatchinginput RFinmatching0.7 dB loss0.6 dB lossFigure 5.

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