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ATF-54143 from AVAGO, 10000pcs , QFN , Alternate PN:ATF54143,ATF-54143 · Single Voltage E-pHEMT Low Noise +36 dBm OIP3 in SC-70
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ATF-54143 AVAGO N/a 10000
ATF-54143 from AGILENT, Agilent (Hewlett-Packard) 2240pcs , SOT343 , Alternate PN:ATF54143,ATF-54143 · Single Voltage E-pHEMT Low Noise +36 dBm OIP3 in SC-70
Electrical SpecificationsT = 25°C, RF parameters measured in a test circuit for a typical deviceA[2]Symbol Parameter and Test Condition Units Min. Typ. Max.Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52Idss Saturated Drain Current Vds = 3V, Vgs = 0V µA— 1 5Gm Transconductance Vds = 3V, gm = ∆Idss/∆Vgs; mmho 230 410 560∆Vgs = 0.75 - 0.7 = 0.05VIgss Gate Leakage Current Vgd = Vgs = -3V µA — — 200[1]NF Noise Figure f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —[1]Ga Associated Gain f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —rdOIP3 Output 3 Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —[1]Intercept Point f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —[1]Output Power f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —Notes:1. Measurements obtained using production test board described in Figure 5.2. Typical values measured from a sample size of 450 parts from 9 wafers.50 Ohm Input Output 50 OhmInput OutputTransmission Matching Circuit Matching Circuit TransmissionDUTLine IncludingΓ_mag = 0.30Γ_mag = 0.035 Line IncludingGate Bias TΓ_ang = 150°Γ_ang = -71° Drain Bias T(0.3 dB loss) (0.3 dB loss) (0.4 dB loss) (0.3 dB loss)Figure 5. applicationsAttention:Note:Observe precautions for1. Enhancement mode technology requireshandling electrostaticpositive Vgs, thereby eliminating the need forsensitive devices.the negative gate voltage associated withconventional depletion mode devices.ESD Machine Model (Class A)ESD Human Body Model (Class 1A)Refer to Agilent Application Note A004R:Electrostatic Discharge Damage and Control.4Fx[1]ATF-54143 Absolute Maximum RatingsNotes:Absolute1. Operation of this device in excess of any oneSymbol Parameter Units Maximumof these parameters may cause permanentdamage.[2]V Drain - Source Voltage V5DS2. Assumes DC quiescent conditions.[2]V Gate - Source Voltage V -5 to 13. Source lead temperature is 25°C. DerateGS6.2 mW/°C for T > 33°C.[2] LV Gate Drain Voltage V -5 to 1GD4. Thermal resistance measured using[2]I Drain Current mA 120150°C Liquid Crystal Measurement method.DS5. The device can handle +13 dBm RF Input[3]P Total Power Dissipation mW 725dissPower provided I is limited to 2 mA. I atGS GS [5]P RF Input Power dBm 13P drive level is bias circuit dependent. Seein max. 1dBapplication section for additional information.[5]I Gate Source Current mA 2GST Channel Temperature °C 150CHT Storage Temperature °C -65 to 150STG[4]θ Thermal Resistance °C/W 162jc1200.7V1000.6V80600.5V40200.4V0.3V0021437 56V (V)DSFigure 1. Typical I-V Curves. (V = 0.1 V per step)GS [6, 7]Product Consistency Distribution Charts160 200 160Cpk = 0.77 Cpk = 1.35 Cpk = 1.67Stdev = 1.41 Stdev = 0.4 Stdev = 0.073160120 120120-3 Std -3 Std +3 Std +3 Std80 80804040400 0030 32 34 36 38 40 42 14 15 16 17 18 190.25 0.45 0.65 0.85 1.05GAIN (dB)OIP3 (dBm) NF (dB)Figure 3. Gain @ 2 GHz, 3 V, 60 mA.Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.Figure 4. NF @ 2 GHz, 3 V, 60 mA.USL = 18.5, LSL = 15, Nominal = 16.6LSL = 33.0, Nominal = 36.575USL = 0.9, Nominal = 0.49Notes:6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywherebetween the upper and lower limits.7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based onproduction test equipment. Circuit losses have been de-embedded from actual measurements.2I (mA)DSATF-54143

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