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ATF-54143-TR1 from AVAGO/AGILENT, 1000pcs , SOT343 , Alternate PN:ATF54143TR1,Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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ATF-54143-TR1 AVAGO/AGILENT N/a 1000
ATF-54143-TR1 from AGILENT, Agilent (Hewlett-Packard) 2548pcs , SOT343 , Alternate PN:ATF54143TR1,Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
Electrical SpecificationsT = 25°C, RF parameters measured in a test circuit for a typical deviceA[2]Symbol Parameter and Test Condition Units Min. Typ. Max.Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52Idss Saturated Drain Current Vds = 3V, Vgs = 0V µ A — 15Gm Transconductance Vds = 3V, gm = ∆ Idss/∆ Vgs; mmho 230 410 560∆ Vgs = 0.75 - 0.7 = 0.05VIgss Gate Leakage Current Vgd = Vgs = -3V µ A —— 200[1]NF Noise Figure f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —[1]Ga Associated Gain f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —rdOIP3 Output 3 Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —[1]Intercept Point f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —[1]Output Power f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —Notes:1. Measurements obtained using production test board described in Figure 5.2. Typical values measured from a sample size of 450 parts from 9 wafers.50 Ohm Input Output 50 OhmInput OutputTransmission Matching Circuit Matching Circuit TransmissionDUTLine Including Γ_mag = 0.30 Γ_mag = 0.035 Line IncludingGate Bias T Γ_ang = 150° Γ_ang = -71° Drain Bias T(0.3 dB loss) (0.3 dB loss) (0.4 dB loss) (0.3 dB loss)Figure 5. applicationsNote:1. Enhancement mode technology requirespositive Vgs, thereby eliminating the need forthe negative gate voltage associated withconventional depletion mode devices.4Fx[1]ATF-54143 Absolute Maximum RatingsNotes:Absolute1. Operation of this device in excess of any oneSymbol Parameter Units Maximumof these parameters may cause permanentdamage.[2]V Drain - Source Voltage V5DS2. Assumes DC quiescent conditions.[2]V Gate - Source Voltage V -5 to 13. Source lead temperature is 25°C. DerateGS6 mW/°C for T > 92°C.[2] LV Gate Drain Voltage V5GD4. Thermal resistance measured using[2]I Drain Current mA 120150°C Liquid Crystal Measurement method.DS5. The device can handle +10 dBm RF Input[3]P Total Power Dissipation mW 360dissPower provided I is limited to 2 mA. I atGS GS [5]P RF Input Power dBm 10P drive level is bias circuit dependent. Seein max. 1dBapplication section for additional information.[5]I Gate Source Current mA 2GST Channel Temperature °C 150CHT Storage Temperature °C -65 to 150STG[4]θ Thermal Resistance °C/W 162jc1200.7V1000.6V80600.5V40200.4V0.3V0021437 56V (V)DSFigure 1. Typical I-V Curves. (V = 0.1 V per step)GS [6, 7]Product Consistency Distribution Charts160 200 160Cpk = 0.77 Cpk = 1.35 Cpk = 1.67Stdev = 1.41 Stdev = 0.4 Stdev = 0.073160120 120120-3 Std -3 Std +3 Std +3 Std80 80804040400 0030 32 34 36 38 40 42 14 15 16 17 18 190.25 0.45 0.65 0.85 1.05GAIN (dB)OIP3 (dBm) NF (dB)Figure 3. Gain @ 2 GHz, 3 V, 60 mA.Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.Figure 4. NF @ 2 GHz, 3 V, 60 mA.USL = 18.5, LSL = 15, Nominal = 16.6LSL = 33.0, Nominal = 36.575USL = 0.9, Nominal = 0.49Notes:6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywherebetween the upper and lower limits.7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based onproduction test equipment. Circut losses have been de-embeaded from actual measurements.2I (mA)DSATF-54143
ATF-54143-TR1G AVAGO, Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

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