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ATF-35143-TR1 from AT, Atmel 5329pcs , SOT343 , Alternate PN:ATF35143TR1,Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
Partno Mfg Dc Qty Available
ATF-35143-TR1 AT N/a 5329
ATF-35143-TR1 from HP, 3000pcs , SOT-343 , Alternate PN:ATF35143TR1,Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR1 from AGILENT, Agilent (Hewlett-Packard) 100300pcs , SOT343 , Alternate PN:ATF35143TR1,Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR1 15000pcs , SOT343 , Alternate PN:ATF35143TR1,Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
Applications5Px2[1]ATF-35143 Absolute Maximum RatingsNotes:Absolute1. Operation of this device above any oneSymbol Parameter Units Maximumof these parameters may cause[2]V Drain - Source Voltage V 5.5permanent damage.DS2. Assumes DC quiesent conditions.[2]V Gate - Source Voltage V-5GS3. V = 0 VGS[2]V Gate Drain Voltage V-54. Source lead temperature is 25°C.GDDerate 3.2 mW/°C for T > 67°C.[2] [3]LI Drain Current mA IDS dss5. Thermal resistance measured using[4]P Total Power Dissipation mW 300150°C Liquid Crystal Measurementdissmethod.P RF Input Power dBm 14in maxT Channel Temperature °C 160CHT Storage Temperature °C -65 to 160STG[5]θ Thermal Resistance °C/W 310jc[7, 8]Product Consistency Distribution Charts120120Cpk = 1.73Std = 0.35+0.6 V10010080800 V-3 Std +3 Std60604040–0.6 V20200019 20 21 22 23 2402 4 6 8OIP3 (dBm)V (V)DS[6]Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.Figure 1. Typical Pulsed I-V Curves . LSL=19.0, Nominal=20.9, USL=23.0(V = -0.2 V per step)GS 200 160Cpk = 3.7 Cpk = 2.75Std = 0.03 Std = 0.17160120120-3 Std +3 Std -3 Std +3 Std808040400 00.2 0.3 0.4 0.5 0.6 0.716 17 18 19 20GAIN (dB)NF (dB)Figure 3. NF @ 2 GHz, 2 V, 15 mA. Figure 4. Gain @ 2 GHz, 2 V, 15 mA.LSL=0.2, Nominal=0.37, USL=0.7 LSL=16.5, Nominal=18.0, USL=19.5Notes:6. Under large signal conditions, V may 7. Distribution data sample size is 450 8. Measurements made on production testGSswing positive and the drain current may samples taken from 9 different wafers. board. This circuit represents a trade-offexceed I . These conditions are Future wafers allocated to this product between an optimal noise match and adssacceptable as long as the maximum P may have nominal values anywhere realizeable match based on production testdissand P ratings are not exceeded. within the upper and lower spec limits. requirements. Circuit losses have been de-in maxembedded from actual measurements.I (mA)DS3ATF-35143 Applications Page 1 2001.04.26, 9:16 AM5Px[1]ATF-35143 Absolute Maximum RatingsNotes:Absolute1. Operation of this device above any oneSymbol Parameter Units Maximumof these parameters may cause[2]V Drain - Source Voltage V 5.5permanent damage.DS2. Assumes DC quiesent conditions.[2]V Gate - Source Voltage V-5GS3. V = 0 VGS[2]V Gate Drain Voltage V-54. Source lead temperature is 25
ATF-35143-TR1 AT,Applications5Px2[1]ATF-35143 Absolute Maximum RatingsNotes:Absolute1. Operation of this device above any oneSymbol Parameter Units Maximumof these pa ..

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