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Partno Mfg Dc Qty AvailableDescript
AT27C800-12RC |AT27C80012RC00+N/a7avai8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800-12RC |AT27C80012RCATMELN/a89avai8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM


AT27C800-12RC ,8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROMFeatures• Read Access Time - 100 ns • Word-wide or Byte-wide Configurable• 8-Megabit Flash and Mask ..
AT27C800-12RC ,8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROMBlock DiagramAT27C8002AT27C800 Absolute Maximum Ratings**NOTICE: Stresses beyond those listed under ..
AT27LV010A ,1M bit, 3-Volt EPROMFeatures• Fast Read Access Time - 70 ns• Dual Voltage Range Operation– Low Voltage Power Supply Ran ..
AT27LV010A-12 ,1 Megabit 128K x 8 Low Voltage OTP CMOS EPROMAT27LV010A
AT27LV010A-12JC ,1 Megabit 128K x 8 Low Voltage OTP CMOS EPROMBlock DiagramTemperature Under Bias .................. -40°C to +85°CStorage Temperature........... ..
AT27LV010A-12JI ,1 Megabit 128K x 8 Low Voltage OTP CMOS EPROMFeaturesFast Read Access Time - 90 ns•Dual Voltage Range Operation•Low Voltage Power Supply Range, ..
ATN3580-08 , Fixed Attenuator Pads
ATP201 ,N-Channel Power MOSFET, 30V, 35A, 17mOhm, Single ATPAKMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSS ..
ATP202-TL-H , General-Purpose Switching Device Applications
ATP204 ,N-Channel Power MOSFET, 30V, 100A, 5.6mOhm, Single ATPAKMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSS ..
ATP207 ,N-Channel Power MOSFET, 40V, 65A, 9.1mOhm, Single ATPAKMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 40 VDSS ..
ATP212 ,N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAKMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..


AT27C800-12RC

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