IC Phoenix
 
Home ›  AA29 > ADG839YKSZ-500RL7-ADG839YKSZ-REEL7,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
ADG839YKSZ-500RL7-ADG839YKSZ-REEL7 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
ADG839YKSZ-500RL7 |ADG839YKSZ500RL7AD N/a2226avai0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
ADG839YKSZ-REEL7 |ADG839YKSZREEL7ADN/a1167avai0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
ADG839YKSZ-REEL7 |ADG839YKSZREEL7ADIN/a170avai0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX


ADG839YKSZ-500RL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXGENERAL DESCRIPTION The ADG839 is a low voltage CMOS device containing a single- Table 1. ADG839 Tr ..
ADG839YKSZ-REEL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXFEATURES FUNCTIONAL BLOCK DIAGRAM 1.65 V to 3.6 V operation ADG839Ultralow on resistance: S20.35 Ω ..
ADG839YKSZ-REEL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXSPECIFICATIONS —2.7 V TO 3.6 VVDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. Table 2. ..
ADG849YKSZ-500RL7 ,3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70GENERAL DESCRIPTION 1. Very low on-resistance, 0.5 Ω ty pical. The ADG849 is a monolithic, CMOS SPD ..
ADG849YKSZ-REEL7 ,3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70SPECIFICATIONS 1Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V–40°C to –40°C to Parameter +25°C +85°C +12 ..
ADG884BCBZ-500RL7 ,DUAL 2:1 MUX/SPDT AUDIO SWITCHapplications. Logic (IN1/IN2) Switch 1A/2A Switch 1B/2B When on, each switch conducts equally well ..
AGN20003 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case


ADG839YKSZ-500RL7-ADG839YKSZ-REEL7
0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
0.35 Ω CMOS 1.65 V to 3.6 V
Single SPDT Switch/2:1 MUX

Rev. 0
FEATURES
1.65 V to 3.6 V operation
Ultralow on resistance:
0.35 Ω typical
0.5 Ω max at 2.7 V supply
Excellent audio performance, ultralow distortion:
0.055 Ω typical
0.09 Ω max RON flatness
High current carrying capability:
300 mA continuous
500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
FUNCTIONAL BLOCK DIAGRAM

SWITCHES SHOWNFOR A LOGIC 1 INPUT
Figure 1.
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
PRODUCT HIGHLIGHTS

1. 0.6 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.01% typ).
5. Tiny SC70 package.
GENERAL DESCRIPTION

The ADG839 is a low voltage CMOS device containing a single-
pole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Table 1. ADG839 Truth Table

TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V........................................................3
Specifications—2.3 V to 2.7 V........................................................4
Specifications—1.65 V to 1.95 V....................................................5
Absolute Maximum Ratings............................................................6
ESD Caution..................................................................................6
Pin Configuration and Function Descriptions.............................7
Typical Performance Characteristics..............................................8
Terminology....................................................................................11
Test Circuits.....................................................................................12
Outline Dimensions.......................................................................14
Ordering Guide..........................................................................14
REVISION HISTORY
10/04—Initial Version: Revision 0
SPECIFICATIONS1—2.7 V TO 3.6 V
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.

Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
SPECIFICATIONS1—2.3 V TO 2.7 V
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.

Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
SPECIFICATIONS1—1.65 V TO 1.95 V
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 4.


1 Temperature range for the Y version is −40°C to +125°C. Guaranteed by design; not subject to production test.
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.

___________________
1 Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
GND

04449-002
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions

For more information, refer to the Terminology section.
TYPICAL PERFORMANCE CHARACTERISTICS
0.0500.51.01.52.02.53.03.5

VD, VS(V)
ON RE
ANCE

Figure 3. On Resistance vs. VD (VS) VDD = 3 V to 3.6 V
0.0500.51.01.52.02.5

VD, VS(V)
ON RE
ANCE
Figure 4. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V
0.102.01.81.61.41.21.00.80.60.40.2

VD, VS(V)
ON RE
ANCE
Figure 5. On Resistance vs. VD (VS) VDD = 1.8 V ± 0.15 V
0.0503.02.52.01.51.00.5

VD, VS(V)
ON RE
ANCE
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
0.102.52.01.51.00.5

VD, VS(V)
ON RE
ANCE
Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V
0.101.81.61.41.21.00.80.60.40.2

VD, VS(V)
ON RE
ANCE
Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED