ADG836YRM ,0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUXSPECIFICATIONS (V = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.)DD –40C ..
ADG836YRM-REEL7 ,0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUXGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG836 is a low voltage CMOS device containing two 1. <0. ..
ADG839YKSZ-500RL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXGENERAL DESCRIPTION The ADG839 is a low voltage CMOS device containing a single- Table 1. ADG839 Tr ..
ADG839YKSZ-REEL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXFEATURES FUNCTIONAL BLOCK DIAGRAM 1.65 V to 3.6 V operation ADG839Ultralow on resistance: S20.35 Ω ..
ADG839YKSZ-REEL7 ,0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUXSPECIFICATIONS —2.7 V TO 3.6 VVDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. Table 2. ..
ADG849YKSZ-500RL7 ,3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70GENERAL DESCRIPTION 1. Very low on-resistance, 0.5 Ω ty pical. The ADG849 is a monolithic, CMOS SPD ..
AGN20003 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
ADG836YCP-REEL-ADG836YRM-ADG836YRM-REEL7
0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX
ADG836–3–REV. 0
ADG836–SPECIFICATIONS1
REV. 0
ADG836–5–REV. 0
ADG836
REV. 0
–7–
Typical Performance Characteristics–ADG836REV. 0
