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ADG822BRMADIN/a2avaiCMOS Low Voltage 1 Ω Dual SPST Switches
ADG823BRMADIN/a4avai<1 Ω, Low Voltage (1.8 V


ADG823BRM ,<1 Ω, Low Voltage (1.8 Vspecifications –40C to +125C, unless otherwise noted.)DD –40C to –40C to2Parameter 25C +85C + ..
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ADG836YRM-REEL7 ,0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUXGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG836 is a low voltage CMOS device containing two 1. <0. ..
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ADG822BRM-ADG823BRM
<1 Ω, Low Voltage (1.8 V
REV.0
<1 Ω CMOS 1.8 V to 5.5 V,
Dual SPST Switches
FEATURES
0.8 � Max On Resistance @125�C
0.28 � Max On Resistance Flatness @125�C
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40�C to +125�C
Rail-to-Rail Operation
8-Lead MSOP Package
33 ns Switching Times
Typical Power Consumption (<0.01 �W)
TTL/CMOS Compatible Inputs
Pin Compatible with ADG721/722/723
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Audio and Video Signal Routing
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION

The ADG821, ADG822, and ADG823 are monolithic CMOS
SPST (single pole, single throw) switches. These switches are
designed on an advanced submicron process that provides low
power dissipation, yet gives high switching speed, low on
resistance, and low leakage currents.
The ADG821, ADG822, and ADG823 are designed to operate
from a single 1.8 V to 5.5 V supply, making them ideal for use
in battery-powered instruments.
Each switch of the ADG821/ADG822/ADG823 conducts equally
well in both directions when on. The ADG821, ADG822, and
ADG823 contain two independent SPST switches. The ADG821
and ADG822 differ only in that both switches are normally open
and normally closed, respectively. In the ADG823, Switch 1 is
normally open and Switch 2 is normally closed. The ADG823
exhibits break-before-make switching action.
The ADG821, ADG822, and ADG823 are available in an 8-lead
MSOP package.
PRODUCT HIGHLIGHTS
Very Low On Resistance (0.5 Ω typ)On Resistance Flatness (RFLAT(ON)) (0.15 Ω typ)Automotive Temperature Range –40°C to +125°C200 mA Current Carrying CapabilityLow Power Dissipation. CMOS construction ensures low
power dissipation.8-Lead MSOP Package
ADG821/ADG822/ADG823–SPECIFICATIONS1
ANALOG SWITCH
DIGITAL INPUTS
NOTESTemperature range: Automotive range: –40°C to +125°C.On resistance parameters tested with IS = 10 mA.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V ± 10%, GND = 0 V. All specifications
–40�C to +125�C, unless otherwise noted.)
ADG821/ADG822/ADG823
(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40�C to +125�C, unless otherwise noted.)1

ANALOG SWITCH
NOTES
1Temperature range: Automotive range: –40°C to +125°C.
2On resistance parameters tested with IS = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG821/ADG822/ADG823
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADG821/ADG822/ADG823 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1

(TA = 25°C, unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Digital Inputs2 . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .400 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . .200 mA
Operating Temperature Range
Automotive . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature (Tj max) . . . . . . . . . . . . . . . . . . . 150°C
Package Power Dissipation . . . . . . . . . . . . . .(Tj max – TA)/θJA
8-Lead MSOP Package
θJAThermal Impedance . . . . . . . . . . . . . . . . . . . . .206°C/W
θJCThermal Impedance . . . . . . . . . . . . . . . . . . . . . .44°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . .300°C
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . .235°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Branding on MSOP packages is limited to three characters due to space constraints.
Table I.Truth Table for the ADG821/ADG822
Table II.Truth Table for the ADG823
TERMINOLOGY
PIN CONFIGURATION
8-Lead MSOP
(RM-8)
ADG821/ADG822/ADG823–Typical Performance Characteristics
TPC 1. On Resistance vs. VD (VS)
TPC 4. On Resistance vs. VD (VS)
for Different Temperatures
TPC 7.tON/tOFF vs. Temperature
TPC 2. On Resistance vs. VD (VS)
TPC 5.Leakage Currents vs.
Temperature
TPC 8.Off Isolation vs. Frequency
TPC 3. On Resistance vs. VD (VS)
for Different Temperatures
TPC 6.Charge Injection vs.
Source Voltage
TPC 9.On Response vs. Frequency
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