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ADG711BRADN/a17avaiCMOS Low Voltage 4 ohm Quad SPST Switches
ADG711BRUADN/a94avaiCMOS Low Voltage 4 ohm Quad SPST Switches
ADG712BRADN/a213avaiCMOS Low Voltage 4 ohm Quad SPST Switches
ADG712BRUADN/a73avaiCMOS Low Voltage 4 ohm Quad SPST Switches
ADG713BRADN/a10000avaiCMOS Low Voltage 4 ohm Quad SPST Switches
ADG713BRUADIN/a1avaiCMOS Low Voltage 4 ohm Quad SPST Switches


ADG713BR ,CMOS Low Voltage 4 ohm Quad SPST SwitchesSPECIFICATIONSDD B Version–408C toParameter +258C +858C Units Test Conditions/Comments ANA ..
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ADG711BR-ADG711BRU-ADG712BR-ADG712BRU-ADG713BR-ADG713BRU
CMOS Low Voltage 4 ohm Quad SPST Switches
REV.0
CMOS
Low Voltage 4 V Quad SPST Switches
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
+1.8 V to +5.5 V Single Supply
Low On Resistance (2.5 V Typ)
Low On-Resistance Flatness
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
16-Lead TSSOP and SOIC Packages
Fast Switching Times
tON 16 ns
tOFF 10 ns
Typical Power Consumption (< 0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION

The ADG711, ADG712 and ADG713 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed,
low on resistance, low leakage currents and high bandwidth.
They are designed to operate from a single +1.8 V to +5.5 V
supply, making them ideal for use in battery powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices. Fast switching times and high bandwidth
make the part suitable for video signal switching.
The ADG711, ADG712 and ADG713 contain four independent
single-pole/single throw (SPST) switches. The ADG711 and
ADG712 differ only in that the digital control logic is inverted.
The ADG711 switches are turned on with a logic low on the
appropriate control input, while a logic high is required to turn
on the switches of the ADG712. The ADG713 contains two
switches whose digital control logic is similar to the ADG711,
while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when ON.
The ADG713 exhibits break-before-make switching action.
The ADG711/ADG712/ADG713 are available in 16-lead TSSOP
and 16-lead SOIC packages.
PRODUCT HIGHLIGHTS
+1.8 V to +5.5 V Single Supply Operation. The ADG711,
ADG712 and ADG713 offer high performance and are
fully specified and guaranteed with +3 V and +5 V supply
rails.Very Low RON (4.5 W max at +5 V, 8 W max at +3 V). At
supply voltage of +1.8 V, RON is typically 35 W over the
temperature range.Low On-Resistance Flatness.–3 dB Bandwidth >200 MHz.Low Power Dissipation.
CMOS construction ensures low power dissipation.Fast tON/tOFF.Break-Before-Make Switching.
This prevents channel shorting when the switches are con-
figured as a multiplexer (ADG713 only).16-Lead TSSOP and 16-Lead SOIC Packages.
ADG711/ADG712/ADG713–SPECIFICATIONS1(VDD = +5 V 6 10%, GND = 0 V. All specifications
–408C to +858C unless otherwise noted.)

ANALOG SWITCH
Analog Signal Range
LEAKAGE CURRENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG711/ADG712/ADG713
(VDD = +3 V 6 10%, GND = 0 V. All specifications –408C to +858C unless otherwise noted.)

NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
SPECIFICATIONS1
ADG711/ADG712/ADG713
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG711/ADG712/ADG713 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1

(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . .–0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . .430 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .150°C/WJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .27°C/W
ORDERING GUIDE

SOIC Package, Power Dissipation . . . . . . . . . . . . . . .520 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . .125°C/WJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . .42°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 kV
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
PIN CONFIGURATION
(TSSOP/SOIC)
NC = NO CONNECT
IN1
GND
IN4
IN2
VDD
IN3
Table I.Truth Table (ADG711/ADG712)
Table II.Truth Table (ADG713)
TERMINOLOGY
Typical Performance Characteristics
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
0.5
1.51.522.533.544.5

Figure 1.On Resistance as a Function of VD (VS)
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts

0.51.522.5

Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
ADG711/ADG712/ADG713
–Typical Performance Characteristics
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
0.5
1.51.522.533.544.55

Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V

FREQUENCY – Hz
10m
10010M1k
SUPPLY
– Amps
10k100k1M
100m
10m
100n
10n

Figure 4.Supply Current vs. Input Switching Frequency

FREQUENCY – Hz
OFF ISOLATION – dB
10k100k1M10M100M
–50

Figure 5.Off Isolation vs. Frequency
FREQUENCY – Hz
CROSSTALK – dB
10k100k1M10M
100M
–50

Figure 6.Crosstalk vs. Frequency
FREQUENCY – Hz
ON RESPONSE – dB
10k100k1M10M
100M

Figure 7.On Response vs. Frequency

SOURCE VOLTAGE – Volts
INJ
– pC
–100.51.522.533.544.55

Figure 8.Charge Injection vs. Source Voltage
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