IC Phoenix
 
Home ›  AA28 > ADG636YRU,1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch
ADG636YRU Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
ADG636YRUADN/a45avai1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch


ADG636YRU ,1pC Charge Injection, 100pA Leakage CMOS Dual SPDT SwitchGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG636 is a monolithic device, comprising two independent ..
ADG659YRU ,3V/5V ± 5V CMOS 4/8 Channel Analog MultiplexersSPECIFICATIONS: DUAL SUPPLY 1VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted. ..
ADG661BRU ,LC2MOS Precision 5 V Quad SPST SwitchesCHARACTERISTICSt 150 ns typ R = 300 Ω, C = 35 pF;ON L L275 ns max V = ±3 V; Test Circuit 4St 55 ns ..
ADG662BRU ,LC2MOS Precision 5 V Quad SPST Switchesapplications. Inherent in the design is low chargesignal switching. injection for minimum transient ..
ADG701BRJ-REEL7 ,4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NCAPPLICATIONS ADG702 offer high performance, including low on Battery powered systems resistance and ..
ADG701BRM ,CMOS Low Voltage 2ohm SPST SwitchesGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG701/ADG702 are monolithic CMOS SPST switches. 1. +1.8 ..
AFCT-5805AZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5805AZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5805DZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5944LZ , Single Mode SFF Transceivers for SONET OC-48/SDH STM-16 Multirate Operation
AFE0064IPBK ,64 Channel Analog Front End for Digital X-Ray Detector 128-LQFP -40 to 85maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functio ..
AFE1124E ,Brown Corporation - HDSL/MDSL ANALOG FRONT END


ADG636YRU
1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch
REV.0
1 pC Charge Injection, 100 pA Leakage
CMOS �5 V/+5 V/+3 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
FEATURES
1 pC Charge Injection

�2.7 V to �5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40�C to +125�C
100 pA (Max @ 25�C) Leakage Currents
85 � Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 �W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
GENERAL DESCRIPTION

The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
It offers on-resistance of 85 Ω typ, which is matched to withinΩ between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
Ultralow Charge Injection (QINJ: ±1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85°CDual ±2.7 V to ±5 V or Single +2.7 V to +5.5 V Supply
4. Automotive Temperature Range: –40°C to +125°C
5. Small 14-Lead TSSOP Package
ADG636–SPECIFICATIONS
LEAKAGE CURRENTS
DIGITAL INPUTS
POWER REQUIREMENTS
NOTESY Version Temperature Range: –40°C to +125°CGuaranteed by design, not subject to production test.
DUAL SUPPLY1(VDD = 5 V � 10%, VSS = –5 V � 10%, GND = 0 V. All specifications –40�C to +125�C unless noted.)
ADG636
DIGITAL INPUTS
POWER REQUIREMENTS
NOTESY Version Temperature Range: –40°C to +125°CGuaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V � 10%, VSS = 0 V, GND = 0 V. All specifications –40�C to +125�C unless otherwise noted.)SINGLE SUPPLY1
ADG636
NOTESY Version Temperature Range: –40°C to +125°CGuaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 3 V � 10%, VSS = 0 V, GND = 0 V. All specifications –40�C to +125�C unless otherwise noted.)SINGLE SUPPLY1
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG636 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1

(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog Inputs2 . . . . . . . . . . . . . . . .VSS – 0.3 V to VDD + 0.3 V
Digital Inputs2 . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . 20 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . .10 mA
Operating Temperature Range
Automotive (Y Version) . . . . . . . . . . . . . .–40°C to +125°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Table I.Truth Table
ORDERING GUIDE

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
TSSOP Package
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . .150°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . .27°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . . . .300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . .220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at EN, A0, A1, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
PIN CONFIGURATION
ADG636
TERMINOLOGY
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED