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ADG608BNADN/a42avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
ADG608BRADN/a855avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
ADG608BRUADN/a623avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
ADG608TRUADN/a2avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
ADG609BNN/a3avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
ADG609BRADN/a39avai3 V/5 V, 4/8 Channel High Performance Analog Multiplexers


ADG608BR ,3 V/5 V, 4/8 Channel High Performance Analog MultiplexersAPPLICATIONSDECODER DECODERAutomatic Test EquipmentData Acquisition SystemsA0 A1 A2 EN A0 A1 ENComm ..
ADG608BRU ,3 V/5 V, 4/8 Channel High Performance Analog MultiplexersGENERAL DESCRIPTIONThe ADG608 and ADG609 are monolithic CMOS analog mul-PRODUCT HIGHLIGHTStiplexers ..
ADG608TRU ,3 V/5 V, 4/8 Channel High Performance Analog MultiplexersSpecifications subject to change without notice.–2– REV. AADG608/ADG6091SINGLE SUPPLY (V = +5 V 6 1 ..
ADG609BN ,3 V/5 V, 4/8 Channel High Performance Analog MultiplexersSPECIFICATIONS1(V = +5 V 6 10%, V = –5 V 6 10%, GND = 0 V, unless otherwise noted)DUAL SUPPLY DD SS ..
ADG609BR ,3 V/5 V, 4/8 Channel High Performance Analog MultiplexersCHARACTERISTICSt 80 80 ns typ R = 300 Ω, C = 35 pF;TRANSITION L L100 130 100 150 ns max V = 3.5 V/0 ..
ADG611YRU ,1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST SwitchesGENERAL DESCRIPTION PRODUCT HIGHLIGHTS1. Ultralow Charge Injection (1 pC typically)The ADG611, ADG6 ..
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ADG608BN-ADG608BR-ADG608BRU-ADG608TRU-ADG609BN-ADG609BR
3 V/5 V, 4/8 Channel High Performance Analog Multiplexers
REV.A3 V/5 V, 4/8 Channel High
Performance Analog Multiplexers
GENERAL DESCRIPTION

The ADG608 and ADG609 are monolithic CMOS analog mul-
tiplexers comprising eight single channels and four differential
channels respectively, fully specified for ±5 V, +5 V and +3 V
power supplies. The ADG608 switches one of eight inputs to a
common output as determined by the 3-bit binary address lines
A0, A1 and A2. The ADG609 switches one of four differential
inputs to a common differential output as determined by the
2-bit binary address lines A0 and A1. An EN input on both de-
vices is used to enable or disable the device. When disabled, all
channels are switched OFF. All the address and enable inputs
are TTL compatible over the full specified operating tempera-
ture range, making the parts suitable for bus-controlled systems
such as data acquisition systems, process controls, avionics and
ATEs since the TTL compatible address inputs simplify the digital
interface design and reduce the board space requirements.
The ADG608/ADG609 are designed on an enhanced LC2MOS
process that provides low power dissipation yet gives high
switching speed and low on resistance. Each channel conducts
equally well in both directions when ON and has an input signal
range which extends to the supplies. In the OFF condition, sig-
nal levels up to the supplies are blocked. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
The ability to operate from single +3 V, +5 V or ±5 V bipolar
supplies makes the ADG608 and ADG609 perfect for use in
battery operated instruments and with the new generation of
DACs and ADCs from Analog Devices. The use of 5 V sup-
plies and reduced operating currents gives much lower power
dissipation than devices operating from ±15 V supplies.
PRODUCT HIGHLIGHTS
Extended Signal Range
The ADG608/ADG609 are fabricated on an enhanced2MOS process giving an increased signal range which
extends to the supplies.Low Power DissipationLow RONFast Switching TimesBreak-Before-Make Switching
Switches are guaranteed break-before-make so that input
signals are protected against momentary shorting.Single/Dual Supply Operation
ORDERING GUIDE

*N = Plastic DIP; RU = Thin Shrink Small Outline Package (TSSOP);
R = 0.15" Small Outline IC (SOIC).
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
+3 V, +5 V, 65 V Power Supplies
VSS to VDD Analog Signal Range
Low On Resistance (30 V max)
Fast Switching Times
tON 75 ns max
tOFF 45 ns max
Low Power Dissipation (1.5 mW max)
Break-Before-Make Construction
ESD > 5000 V as per Military Standard 3015.7
TTL and CMOS Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Communication Systems
Avionics and Military Systems
Microprocessor Controlled Analog Systems
Medical Instrumentation
Battery Powered Instruments
Remote Powered Equipment
Compatible with 65 V DACs and ADCs such as
AD7840/8, AD7870/1/2/4/5/6/8
ADG608/ADG609–SPECIFICATIONS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
DUAL SUPPLY1(VDD = +5 V 6 10%, VSS = –5 V 6 10%, GND = 0 V, unless otherwise noted)
ANALOG SWITCH
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
SINGLE SUPPLY1(VDD = +5 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG608/ADG609
SINGLE SUPPLY1
(VDD = +3.3 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

ANALOG SWITCH
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG608/ADG609–SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS1
(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +13V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog, Digital Inputs2 . . . . . . . . . . . . . . –0.3 V to VDD + 2 V
or 20 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . 40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Plastic DIP Package
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . +260°C
SOIC Package
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
TSSOP Package
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 158°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >5000 V
NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Only one absolute maximum rating may be applied at any one time.Overvoltages at A, S, D or EN will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
PIN CONFIGURATIONS
DIP/SOIC/TSSOPDIP/SOIC/TSSOP
GND
S2A
S3A
S4A
S2B
S3B
S4B
VSS
S1A
VDD
S1BDB
VSS
GND
VDD
Table I.ADG608 Truth Table
A2

00
00
01
01
10
10
11
11
X = Don’t Care
Table II.ADG609 Truth Table

X = Don’t Care
VD (VS) – Volts
ON RESISTANCE –

–5.05.0–4.00.03.04.0–3.0–2.0–1.01.02.0

Figure 1.RON as a Function of VD (VS): Dual Supply Voltage
ON RESISTANCE –
–5.05.0–4.00.03.04.0
VD (VS) – Volts

Figure 2.RON as a Function of VD (VS) for Different
Temperatures
ON RESISTANCE –
0.03.00.51.5
VD (VS) – Volts
ADG608/ADG609–Typical Performance Characteristics

Figure 4.RON as a Function of VD (VS): Single Supply Voltage
Figure 5.RON as a Function of VD (VS) for Different
Temperatures
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