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ADG419BNADIN/a50avaiLC2MOS Precision Mini-DIP Analog Switch
ADG419BRADIN/a2016avaiLC2MOS Precision Mini-DIP Analog Switch
ADG419BRMADN/a578avaiLC2MOS Precision Mini-DIP Analog Switch
ADG419TQADN/a1008avaiLC2MOS Precision Mini-DIP Analog Switch
ADG419TQADIN/a1224avaiLC2MOS Precision Mini-DIP Analog Switch
ADG419TQ. |ADG419TQADN/a17avaiLC2MOS Precision Mini-DIP Analog Switch


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ADG419BN-ADG419BR-ADG419BRM-ADG419TQ-ADG419TQ.
LC2MOS Precision Mini-DIP Analog Switch
REV.ALC2MOS Precision
Mini-DIP Analog Switch
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (< 35 V)
Ultralow Power Dissipation (< 35 mW)
Fast Transition Time (160 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG419
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
FUNCTIONAL BLOCK DIAGRAM
SWITCH SHOWN FOR A
LOGIC "1" INPUT
GENERAL DESCRIPTION

The ADG419 is a monolithic CMOS SPDT switch. This
switch is designed on an enhanced LC2MOS process that pro-
vides low power dissipation yet gives high switching speed, low
on resistance and low leakage currents.
The on resistance profile of the ADG419 is very flat over the full
analog input range, ensuring excellent linearity and low distor-
tion. The part also exhibits high switching speed and high signal
bandwidth. CMOS construction ensures ultralow power dissipa-
tion, making the parts ideally suited for portable and battery
powered instruments.
Each switch of the ADG419 conducts equally well in both
directions when ON and has an input signal range that extends
to the supplies. In the OFF condition, signal levels up to the
supplies are blocked. The ADG419 exhibits break-before-
make switching action.
PRODUCT HIGHLIGHTS
Extended Signal Range
The ADG419 is fabricated on an enhanced LC2MOS pro-
cess, giving an increased signal range that extends to the
supply rails.Ultralow Power DissipationLow RONSingle Supply Operation
For applications where the analog signal is unipolar, the
ADG419 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG419–SPECIFICATIONS1
(VDD = +15 V 6 10%, VSS = –15 V 6 10%, VL = +5 V 6 10%, GND = 0 V, unless otherwise noted)Dual Supply
ANALOG SWITCH
DIGITAL INPUTS
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Single Supply(VDD = +12 V 6 10%, VSS = 0 V, VL = +5 V 6 10%, GND = 0 V, unless otherwise noted)
ADG419
Table I.Truth Table
ORDERING GUIDE
PIN CONFIGURATION
DIP/SOIC/mSOIC
GND
VDD
VSS
ADG419
ABSOLUTE MAXIMUM RATINGS1

(TA= +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . .–0.3 V to VDD + 0.3 V
Analog, Digital Inputs2 . . . . . . . . . . . .VSS – 2 V to VDD + 2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .600 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .110°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . .400 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .100°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .400 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .155°C/WSOIC Package, Power Dissipation . . . . . . . . . . . . . . .315 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .205°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CD, CS (ON)“ON” switch capacitance.
tTRANSITIONDelay time between the 50% and 90% points
of the digital inputs and the switch “ON”
condition when switching from one address
state to another.“OFF” time or “ON” time measured be-
tween the 90% points of both switches
when switching from one address state
to the other.
VINLMaximum input voltage for logic “0.”
VINHMinimum input voltage for logic “1.”
IINL (IINH)Input current of the digital input.
CrosstalkA measure of unwanted signal which is
coupled through from one channel to
another as a result of parasitic capacitance.
Off IsolationA measure of unwanted signal coupling
through an “OFF” channel.
IDDPositive supply current.
ISSNegative supply current.
TERMINOLOGY

VDDMost positive power supply potential.
VSSMost negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.Logic power supply (+5 V).
GNDGround (0 V) reference.Source terminal. May be an input or an
output.Drain terminal. May be an input or an
output.Logic control input.
RONOhmic resistance between D and S.
IS (OFF)Source leakage current with the switch
“OFF.”
ID (OFF)Drain leakage current with the switch
“OFF.”
ID, IS (ON)Channel leakage current with the switch
“ON.”
VD (VS)Analog voltage on terminals D, S.
CS (OFF)“OFF” switch source capacitance.
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG419 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

VS, VD – Volts
0510
Figure 1. RON as a Function of VD (VS): Dual Supply Voltage

VS, VD – Volts
0510
Figure 2.RON as a Function of VD (VS) for Different
Temperatures
VS, VD – Volts
LEAKAGE CURRENT – nA0510
– 0.02

Figure 3.Leakage Currents as a Function of VS (VD)

VS, VD – Volts

Figure 4. RON as a Function of VD (VS): Single Supply
Voltage

VS, VD – Volts

Figure 5.RON as a Function of VD (VS) for Different
Temperatures
Figure 6.Leakage Currents as a Function of VS (VD)
ADG419
FREQUENCY – Hz
10mA
1mA
1mA
SUPPLY
10mA
100nA
10nA
1nA
100mA

Figure 7.Supply Current vs. Input Switching Frequency
SUPPLY VOLTAGE – Volts
TRANSITION
– ns1214
180

Figure 8.Transition Time vs. Power Supply Voltage
Test Circuits
+15V+5V
VS1
VS2
VIN
–15V
VOUT
VIN
tTRANSITION
tTRANSITION
90%
90%
OUTPUT

Test Circuit 4.Transition Time, tTRANSITION
+15V+5V
VS1
VS2
VIN
–15V
VOUT
ADDRESS
DRIVE(VIN)
0.9VO0.9VOVOUT
0.9VO0.9VO

Test Circuit 5.Break-Before-Make Time Delay, tD
IDS
RON = V1/IDS

Test Circuit 1.On ResistanceVD
IS (OFF)ID (OFF)

Test Circuit 2.Off Leakage
Test Circuit 3.On Leakage
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