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AD8010
Low Power, High Current Distribution Amplifier
REV.B
200 mA Output Current
High-Speed Amplifier
CONNECTION DIAGRAMS
8-Lead DIP and SOIC
16-Lead Wide Body SOICFigure 1.Video Distribution Amplifier
PRODUCT DESCRIPTIONThe AD8010 is a low power, high current amplifier capable of
delivering a minimum load drive of 175 mA. Signal performance
such as 0.02% and 0.03° differential gain and phase error is
maintained while driving eight 75 Ω back terminated video lines.
The current feedback amplifier features gain flatness to 60 MHz
and –3 dB (G = +1) signal bandwidth of 230 MHz and only
requires a typical of 15.5 mA supply current from ±5 V supplies.
These features make the AD8010 an ideal component for Video
Distribution Amplifiers or as the drive amplifier within high data
rate Digital Subscriber Line (VDSL and xDSL) systems.
The AD8010 is an ideal component choice for any application
that needs a driver that will maintain signal quality when driving
low impedance loads.
The AD8010 is offered in three package options: an 8-lead DIP,
16-lead wide body SOIC and a low thermal resistance 8-lead
SOIC, and operates over the industrial temperature range of
–40°C to +85°C.
FEATURES
200 mA of Output Current
9 � Load
SFDR –54 dBc @ 1 MHz
Differential Gain Error 0.04%, f = 4.43 MHz
Differential Phase Error 0.06�, f = 4.43 MHz
Maintains Video Specifications Driving Eight Parallel
75 � Loads
0.02% Differential Gain
0.03� Differential Phase
0.1 dB Gain Flatness to 60 MHz
THD –72 dBc @ 1 MHz, RL = 18.75 �
IP3 42 dBm @ 5 MHz, RL = 18.75 �
1 dB Gain Compression 21 dBm @ 5 MHz, RL = 100 �
230 MHz –3 dB Bandwidth, G = +1, RL = 18.75 �
800 V/�s Slew Rate, RL = 18.75 �
25 ns Settling Time to 0.1%
Available in 8-Lead DIP, 16-Lead Wide Body SOIC and
Thermally Enhanced 8-Lead SOIC
APPLICATIONS
Video Distribution Amplifier
VDSL, xDSL Line Driver
Communications
ATE
Instrumentation
AD8010–SPECIFICATIONS(@ 25�C, VS = �5 V, G = +2, RL = 18.75 �, RS+ = 150 �, RF = RG = 604 � (R-16),
RF = RG = 562 � (N-8), RF = RG = 499 � (R-8). TMIN = –40�C, TMAX = +85�C unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS1SupplyVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6V
InternalPowerDissipation2
PlasticPackage (N) . . . . . . Observe Power Derating Curves
SmallOutlinePackage (R) . Observe Power Derating Curves
Wide Body SOIC (R-16) . . . Observe Power Derating Curves
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . ±VS
DifferentialInputVoltage . . . . . . . . . . . . . . . . . . . . . . ±1.2V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . –40°C to +85°C
Lead Temperature Range (Soldering10sec) . . . . . . . . 300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 122°C/W
16-Lead SOIC Package: θJA = 73°C/W
Figure 2.Plot of Maximum Power Dissipation vs. Temperature
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8010 features proprietary ESD protection circuitry, permanent damage may
ORDERING GUIDE
MAXIMUM POWER DISSIPATIONThe maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period
can result in device failure.
While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
AD8010Figure 3.Distribution of Differential Gain (dG) and
Differential Phase (dφ); RL = 18.75 Ω
Figure 4.Harmonic Distortion vs. Frequency; G = +2
Figure 5.Gain Flatness vs. Frequency Over Temperature
(–40°C to +85°C)
Figure 6.Differential Gain and Phase vs. Number of Video
Loads Over Temperature (–40°C to +85°C); f = 4.43 MHz
Figure 7.Two-Tone, 3rd Order IMD Intercept vs.
Frequency; G = +2, RL = 18.75 Ω
Figure 8.Gain Flatness vs. Frequency vs. Number of
Video Loads
–Typical Performance Characteristics
Figure 9.Intermodulation Distortion
Figure 10.Total Harmonic Distortion vs. POUT; G = +2
Figure 11.Small Signal Closed-Loop Frequency
Response; RL = 18.75 Ω
Figure 12. Multitone Distortion; RL = 100 Ω
Figure 13.Harmonic Distortion vs. Load
Figure 14.Closed-Loop Frequency Response vs.
Number of Video Loads
AD8010Figure 15.PSRR vs. Frequency
Figure 16.Closed-Loop Output Resistance vs. Frequency
Figure 17.Large Signal Frequency Response; VO = 2 V p-p
Figure 18.CMRR vs. Frequency
Figure 19.Transresistance and Phase vs. Frequency;
RL = 18.75 Ω
Figure 20.Large Signal Frequency Response; VO = 4 V p-p
