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AD6432AST
GSM 3 V Transceiver IF Subsystem
REV.0
GSM 3 V Transceiver IF Subsystem
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Fully Compliant with Standard and Enhanced GSM
Specification
DC-350 MHz RF Bandwidths
80 dB Gain Control Range
I/Q Modulation and Demodulation
Onboard Phase Locked Tunable Oscillator
On-Chip Noise Roofing IF Filters
Ultralow Power Design
2.7 V–3.6 V Operating Voltage
User-Selectable Power-Down Modes
Small 44-Lead TQFP Package
Interfaces Directly with AD20msp410 and AD20msp415
GSM Baseband Chipsets
APPLICATIONS
I/Q Modulated Digital Wireless Systems
GSM Mobile Radios
GSM PCMCIA Cards
GENERAL DESCRIPTION
The AD6432 IF IC provides the complete transmit and receive
IF signal processing, including I/Q modulation and demodula-
tion, necessary to implement a digital wireless transceiver such
as a GSM handset. The AD6432 may also be used for other
wireless TDMA standards using I/Q modulation.
The AD6432’s receive signal path is based on the proven archi-
tecture of the AD607 and the AD6459. It consists of a mixer,
gain-controlled amplifiers, integrated roofing filter and I/Q
demodulators based on a PLL. The low noise, high-intercept
variable-gain mixer is a doubly-balanced Gilbert-cell type. It has
a nominal –13 dBm input-referred 1 dB compression point and
a 0 dBm input-referred third-order intercept.
The gain-control input accepts an external control voltage input
from an external AGC detector or a DAC. It provides an 80 dB
gain range with 27.5 mV/dB gain scaling, where the mixer and
the IF gains vary together.
The I and Q demodulators provide inphase and quadrature
baseband outputs to interface with Analog Devices’ AD7015
and AD6421 (GSM, DCS1800, PCS1900) baseband convert-
ers. An onboard quadrature VCO, externally phase-locked to
the IF signal, drives the I and Q demodulators. The quadrature
phase-locked oscillator (QPLO) requires no external compo-
nents for frequency control or quadrature generation, and de-
modulates signals at standard GSM system IFs of 13 MHz, or
26 MHz with a reference input frequency of 13 MHz; or, in
general, 1X or 2X the reference frequency. Maximum reference
frequency is 25 MHz.
This reference signal is normally provided by an external
VCTCXO under the control of the radio’s digital signal
processor. The transmit path consists of an I/Q modulator
and buffer amplifier, suitable for carrier frequencies up to
300 MHz and provides an output power of –17.5 dBm in
a 50 Ω system. The quadrature LO signals driving the
I and Q modulator are generated internally by dividing by
two the frequency of the signal presented at the differential
LO port of the AD6432. In both the transmit and receive
paths, onboard filters provide 30 dB of stopband attenuation.
The AD6432 comes in a 44-lead plastic thin quad flatpack
(TQFP) surface mount package.
AD6432–SPECIFICATIONS(TA = +258C, VP = 3.0 V, GREF = 1.25V unless otherwise noted)
RX IF AMPLIFIER
GAIN CONTROL
INTEGRATED IF FILTER
I AND Q DEMODULATOR
QUADRATURE IF PLL
AD6432
NOTES
All reference to dBm is relative to 50 Ω.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage VPDV, VPPX, VPDM, VPFL, VPPC, VPRX,
to CMTX, CMRX, CMIF, CMD . . . . . . . . . . . . . .+3.6 V
Internal Power Dissipation2 . . . . . . . . . . . . . . . . . . . 600 mW
Operating Temperature Range . . . . . . . . . . . –25°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature, Soldering (60 sec) . . . . . . . . . . . +300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Thermal Characteristics: 44-lead TQFP package: θJA = 126°C.
PIN CONFIGURATION
VPDV
MODO
GND
CMTX
LOLO
LOHI
CMRX
GND
RFLO
RFHI
GND
FREF
GND
IFS0
CMDM
FLTR
VPFL
VPDM
IRXP
IRXN
QRXP
QRXN
VPTXITXPITXNQTXPQTXNTXPUPCAPPCAMGND
VPRX
MXHI
MXLO
IFLO
IFHI
VPPC
CMIFCMIF
RXPU
GAIN
GREF
GND
PCAO
ORDERING GUIDE
*ST = Thin Quad Flatpack.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD6432 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
AD6432
PIN FUNCTION DESCRIPTIONS
TXPU
MODO
DECOUPLING
123Ω
QTXN
QTXP
ITXN
PCAP
R30
49.9Ω
IRXP
IRXN
QRXP
QXRNLOLO
ITXP
VS1
RFHI
VS1
MXHI
MXLO
IFLOIFHIIFS0
RXPU
VS1GNDC7
4.7F
GAIN
GREF
TXPUC7
4.7F
VS2
VS1
PCAO
FREF
VS1
PCAM
Figure 1.Characterization Board
AD6432
VDC
QTX
ITX
C2 1pF
R16
R19
ITXP
ITXN
QTXP
QTXN
VDC
MXLO
MXHI
MXOUT
QRXN
QRXP
QRX
IRXN
IRXP
IRX
IFIN
R28
50Ω
IFLO
R27
IFHI
VDC
NOTES:
VP = +5V
VN = –5VIFS0
RF FREQUENCY – MHz
SINGLE SIDEBAND Rx MIXER NOISE FIGURE – dB150450200250300350400
8.5
Figure 3.Rx Mixer Noise Figure vs. RF Frequency,
TA = +25°C, VPOS = 3 V, VGREF = 1.2 V, VGAIN = 0.2 V
FREQUENCY – MHz
SHUNT RESISTANCE –
SHUNT CAPACITANCE – pF
Figure 4.Rx Mixer Input Impedance vs. RF Frequency,
VPOS = 3 V, TA = +25°C, VGREF = 1.2 V
RF FREQUENCY – MHz
GAIN – dB
225275325
Figure 5.Rx Mixer Conversion Gain vs. RF Frequency,
IF FREQUENCY – MHz1418263442
GAIN – dB2230384650
Figure 6.Mixer Conversion Gain vs. IF Frequency,
TA = +25°C, VPOS = 3 V, VGREF = 1.2 V, FRF = 250 MHz
TEMPERATURE – C
GAIN – dB
–10103050608090
Figure 7.Rx Mixer Conversion Gain and IF Amplifier/
Demodulator Gain vs. Temperature, VGAIN = 0.2 V,
VGREF = 1.2 V, FIF = 26 MHz, FRF = 250 MHz
VGAIN – Volts
INPUT – dBm (REFERRED TO 50
Figure 8.Rx Mixer Input 1 dB Compression Point vs.
AD6432
INTERMEDIATE FREQUENCY – MHz
IF AMP/DEMOD GAIN – dB
–102025303545
Figure 9.IF Amplifier and Demodulator Gain vs. IF
Frequency, TA = +25°C, VPOS = 3 V, VGREF = 1.2 V
IF INPUT FREQUENCY – MHz1520253035
CAPACITANCE – pF
RESISTANCE –
4.0
Figure 10.IF Amplifier Input Impedance vs. Frequency,
TA = +25°C, VPOS = 3 V, VGREF = 1.2 V
VGAIN – Volts0.51.01.52.02.5–60
IF INPUT 1dB COMPRESSION REFERRED
TO 50 OHMS – dBm
Figure 11.IF Amplifier/Demodulator Input 1 dB
Compression Point vs. VGAIN , FIF = 26 MHz,
VGAIN – Volts0.51.01.52.02.5
GAIN ERROR – dB
Figure 12.Gain Error vs. Gain Control Voltage, TA = +25°C,
VPOS = 3 V, VGREF = 1.2 V, FRF = 250 MHz, FIF = 26 MHz
DEMODULATOR VCO FREQUENCY – MHz1520253035
DEMODULATOR QUADRATURE ERROR – Degrees
Figure 13.Demodulator Quadrature Error vs. FREF
Frequency, TA = +25°C, VPOS = 3 V
FREQUENCY OFFSET – kHz
PHASE NOISE – dBc/Hz
Figure 14.PLL Phase Noise vs. Frequency, VPOS = 3 V,
CFLTR =1 nF, RFLTR =1 kΩ, FREF = 13 MHz
FREQUENCY OF VCO – MHz4050
FILTER PIN VOLTAGE
REFERENCED TO V
POS
– Volts2025303545
–1.4
Figure 15.PLL Loop Voltage at FLTR Pin (KVCO) vs.
Frequency
GAIN VOLTAGE – Volts
INPUT 1dB COMPRESSION POINT
REFERRED TO 50 OHMS – dBm
Figure 16.System (Mixer + IF LC Filter + IF Amplifier +
Demodulator) 1 dB Compression Point vs. VGAIN, TA = +25°C,
VPOS = 3 V, FRF = 250 MHz, FIF = 26 MHz, VGREF = 1.2 V
GAIN VOLTAGE – Volts
SYSTEM INPUT IP3
REFERRED TO 50 OHMS – dBm
Figure 17.System (Mixer + IF LC Filter + IF Amplifier +
VGAIN – Volts
CONVERSION GAIN – dB
Figure 18.Rx Mixer Conversion Gain vs VGAIN, TA = +25°C,
VPOS = 3 V, FRF = 250 MHz, FIF = 26 MHz, VGREF = 1.2 V
VGAIN – Volts
IF AMP/DEMODULATOR GAIN – dB10
Figure 19.IF Amplifier/Demodulator Gain vs. VGAIN,
TA = +25°C, VPOS = 3 V, FRF = 250 MHz, FIF = 26 MHz,
VGREF = 1.2 V
GAIN VOLTAGE – Volts
SYSTEM GAIN – dB
Figure 20.System (Mixer + IF LC Filter + IF Amplifier +
AD6432
TEMPERATURE – C
TRANSMIT DESIRED SIDEBAND GAIN – dB100
Figure 21.Tx Desired Sideband Gain vs. Temperature,
TA = +25°C, VPOS = 3 V, FCARRIER = 280 MHz, I and Q Inputs
Driven in Quadrature
CARRIER FREQUENCY – MHz
TRANSMIT DESIRED SIDEBAND GAIN – dB
260280300
Figure 22.Tx Desired Sideband Gain vs. FCARRIER,
TA = +25°C, VPOS = 3 V
TEMPERATURE – C
TYPICAL UNDESIRED
SIDEBAND SUPPRESSION – dBc
Figure 23.Tx Typical Undesired Sideband Suppression
CARRIER FREQUENCY – MHz
TYPICAL UNDESIRED
SIDEBAND SUPPRESSION – dBc
Figure 24.Tx Typical Undesired Sideband Suppression
vs. FCARRIER, TA = +25°C, VPOS = 3 V
GAIN VOLTAGE – Volts10
SUPPLY CURRENT – mA
0.51.01.52.02.5
Figure 25.Rx Mode Supply Current vs. VGAIN, VGREF = 1.2 V
TEMPERATURE – C
Tx MODE SUPPLY CURRENT – mA100
15.0
Figure 26.Tx Mode Supply Current vs. Temperature

Partno	Mfg	Dc	Qty	Available	Descript
AD6432AST	AD	N/a	690	avai	GSM 3 V Transceiver IF Subsystem