IC Phoenix
 
Home ›  881 > 8ETH06-8ETH06FP-8ETH06S,600V 8A HyperFast Discrete Diode in a TO-220AC package
8ETH06-8ETH06FP-8ETH06S Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
8ETH06IRN/a14810avai600V 8A HyperFast Discrete Diode in a TO-220AC package
8ETH06FPIRN/a5avai600V 8A Hyperfast Discrete Diode in a TO-220 FullPack package
8ETH06SIRN/a10avai600V 8A HyperFast Discrete Diode in a D2-Pak (UltraFast) package


8ETH06 ,600V 8A HyperFast Discrete Diode in a TO-220AC packageFeatures• Hyperfast Recovery Timet = 18ns typ.rr • Low Forward Voltage Drop• Low Leakage Cur ..
8ETH06FP ,600V 8A Hyperfast Discrete Diode in a TO-220 FullPack packageFeatures• Hyperfast Recovery Timet = 18ns typ.rr • Low Forward Voltage Drop• Low Leakage Cur ..
8ETH06PBF , Hyperfast Rectifier, 8 A FRED PtTM
8ETH06PBF , Hyperfast Rectifier, 8 A FRED PtTM
8ETH06S ,600V 8A HyperFast Discrete Diode in a D2-Pak (UltraFast) packageApplicationsState of the art Hyperfast recovery rectifiers designed with optimized performance of ..
8ETL06 ,600V 8A Hyperfast Discrete Diode in a TO-220AC packageApplicationsAC-DC SMPS 70W-400We.g. Laptop & Printer AC Adaptors, Desktop PC, TV & Monitor, Games u ..
A-362E , DUAL DIGITS DISPLAY
A3901 , Dual Full Bridge Low Voltage Motor Driver
A3908EEETR-T , Low Voltage DC Motor Driver
A3908EEETR-T , Low Voltage DC Motor Driver
A3949SLPTR-T , DMOS Full-Bridge Motor Driver
A3949SLPTR-T , DMOS Full-Bridge Motor Driver


8ETH06-8ETH06FP-8ETH06S
600V 8A HyperFast Discrete Diode in a TO-220AC package
Bulletin PD-20746 reV.F 02/04
l I 8ETH06
. 8ETH06S
nfernoheho 8ETH06-1
IEBR Rectifier 8ETH06FP
Hyperfast Rectifier
Features
Hyperfast Recovery Time =
Low Fotward Voltage Drop trr 18ns typ.
: Low Leakage Current |F(AV) = 8Amp
175°C Operating Junction Temperature
25OOV insulation voltage © =
UL E78996 approved lhl VR 600V
Description) Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Reverse Voltage 600 V
IHAV) Average Rectified Forward Current@ TC = 144°C 8 A
@ TC = 108°C (FULLPACK)
IFSM Non Repetitive Peak Surge Current @ T, = 25°C 90
(FULLPACK) 100
IFM Peak Repetitive Forward Current 16
Ts TSTG Operating Junction and Storage Temperatures - 65 to 175 “0
Case Styles
8ETH06 8ETH06S 8ETH06-1 8ETH06FP
Base Base 2
Cathode Cathode
i i 1 3
Ol l 3 1 3 1 3 Cathode Anode
Cathode Anode N/C Anode N/C Anode
TO-220AC D2PAK TO-262 TO-220 FULLPACK
1
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 reV.F 02/04
International
IEBR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 600 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - 2.0 2.4 V IF = 8A, TJ = 25°C
- 1.3 1.8 V IF = 8A, To = 150°C
IR Reverse Leakage Current - 0.3 50 PA VR = VR Rated
- 55 500 pA To = 150°C, VR = VR Rated
CT Junction Capacitance - 17 - pF VR = 600V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics ti) Tc = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - 18 22 ns IF = 1A, dir/dt = 100A/ps, VR = 30V
- 20 25 IF = 8A, dir/dt = 1OOA/ps, VR = 30V
- 25 - To = 25''C
- 40 - TJ = 125°C
ls-- 8A
IRRM Peak Recovery Current - 2.4 - A To = 25''C dir/dt = 200A/ps
- 4.8 - T: = 125°C VR = 390V
Qrr Reverse Recovery Charge - 25 - nC T J = 25°C
- 120 - T J = 125°C
trr Reverse Recovery Time - 33 - ns IF: 8 A
IRRM Peak Recovery Current - 12 - A T J = 125°C dip /dt = 600Nps
Gr Reverse Recovery Charge - 220 - nC VR = 390V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T J Max. Junction Temperature Range - - 175 ''C
TStg Max. Storage Temperature Range - 65 - 175
RthJC Thermal Resistance, Junction to Case Per Leg - 1.4 2 ''C/W
(Fullpack) Per Leg - 3.4 4.3
RNA co Thermal Resistance, Junction to Ambient Per Leg - - 70
thCS® Thermal Resistance, Case to Heatsink - 0.5 -
Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 |bf.in
co TypicalSocketMount
© Mounting Surface, Flat, Smooth and Greased
2
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED