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74LVC1G86GFPHIN/a10000avai2-input EXCLUSIVE-OR gate
74LVC1G86GMNXPN/a80000avai2-input EXCLUSIVE-OR gate
74lvc1g86gvNXP/PHILIPSN/a3000avai2-input EXCLUSIVE-OR gate
74LVC1G86GWNXP N/a60000avai74LVC1G86; 2-input EXCLUSIVE-OR gate


74LVC1G86GM ,2-input EXCLUSIVE-OR gateFeatures and benefits Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complie ..
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74LVC1G86GF-74LVC1G86GM-74lvc1g86gv-74LVC1G86GW
2-input EXCLUSIVE-OR gate
1. General description
The 74LVC1G86 provides the 2-input EXCLUSIVE-OR function.
Inputs can be driven from either 3.3Vor5 V devices. These features allow the use of
these devices in a mixed 3.3V and5 V environment.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65Vto 5.5V High noise immunity Complies with JEDEC standard: JESD8-7 (1.65Vto 1.95V) JESD8-5 (2.3Vto 2.7V) JESD8B/JESD36 (2.7Vto 3.6V) ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-A exceeds 200 V 24 mA output drive (VCC =3.0V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5V Multiple package options Specified from 40 C to +85 C and 40 C to +125C
74L VC1G86
2-input EXCLUSIVE-OR gate
Rev. 10 — 2 July 2012 Product data sheet
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate
3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram

Table 1. Ordering information

74LVC1G86GW 40 Cto+125C TSSOP5 plastic thin shrink small outline package; 5
leads; body width 1.25 mm
SOT353-1
74LVC1G86GV 40 Cto+125C SC-74A plastic surface-mounted package; 5 leads SOT753
74LVC1G86GM 40 Cto+125C XSON6 plastic extremely thin small outline package; leads; 6 terminals; body1 1.45 0.5 mm
SOT886
74LVC1G86GF 40 C to +125 C XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 11 0.5 mm
SOT891
74LVC1G86GN 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 0.9 1.0 0.35 mm
SOT1115
74LVC1G86GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.0 1.0 0.35 mm
SOT1202
74LVC1G86GX 40 C to +125C X2SON5 X2SON5: plastic thermal enhanced extremely
thin small outline package; no leads; 5
terminals; body 0.8 0.8 0.35 mm
SOT1226
Table 2. Marking codes

74LVC1G86GW VH
74LVC1G86GV V86
74LVC1G86GM VH
74LVC1G86GF VH
74LVC1G86GN VH
74LVC1G86GS VH
74LVC1G86GX VH
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate

6. Pinning information
6.1 Pinning

NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate
6.2 Pin description

7. Functional description

[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC=0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 and X2SON5 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
Table 3. Pin description
1 1 data input 2 2 data input
GND 3 3 ground (0 V) 4 4 data output
n.c. - 5 not connected
VCC 5 6 supply voltage
Table 4. Function table[1]

LLL H H
HHL
Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - 50 mA output voltage Active mode [1][2] 0.5 VCC + 0.5 V
Power-down mode [1][2] 0.5 +6.5 V output current VO = 0 V to VCC - 50 mA
ICC supply current - +100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125C [3]- 250 mW
Tstg storage temperature 65 +150 C
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate
9. Recommended operating conditions

10. Static characteristics

Table 6. Recommended operating conditions

VCC supply voltage 1.65 - 5.5 V input voltage 0 - 5.5 V output voltage Active mode 0 - VCC V
VCC = 0 V; Power-down mode 0 - 5.5 V
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V - - 20 ns/V
VCC = 2.7 V to 5.5 V - - 10 ns/V
Table 7. Static characteristics

At recommended operating conditions. Voltages are referenced to GND (ground=0V).
VIH HIGH-level
input voltage
VCC = 1.65 V to 1.95 V 0.65VCC - - 0.65VCC -V
VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V
VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V
VCC = 4.5 V to 5.5 V 0.7VCC - - 0.7VCC -V
VIL LOW-level input
voltage
VCC = 1.65 V to 1.95 V - - 0.35VCC - 0.35VCC V
VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3VCC -0.3VCC V
VOH HIGH-level
output voltage =VIHorVIL= 100 A;
VCC =1.65Vto 5.5V
VCC 0.1 - - VCC 0.1 - V= 4mA; VCC = 1.65V 1.2 - - 0.95 - V= 8mA; VCC = 2.3V 1.9 - - 1.7 - V= 12 mA; VCC = 2.7 V 2.2 - - 1.9 - V= 24 mA; VCC = 3.0 V 2.3 - - 2.0 - V= 32 mA; VCC = 4.5 V 3.8 - - 3.4 - V
VOL LOW-level
output voltage =VIHorVIL= 100 A;
VCC= 1.65V to 5.5 V - 0.10 - 0.10 V =4mA; VCC = 1.65V - - 0.45 - 0.70 V =8mA; VCC = 2.3V - - 0.30 - 0.45 V =12mA; VCC = 2.7 V - - 0.40 - 0.60 V =24mA; VCC = 3.0 V - - 0.55 - 0.80 V =32mA; VCC = 4.5 V - - 0.55 - 0.80 V input leakage
current
VI = 5.5 V or GND;
VCC =0Vto5.5V 0.1 5- 100 A
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate

[1] All typical values are measured at VCC=3.3 V and Tamb =25C.
11. Dynamic characteristics

[1] All typical values are measured at nominal VCC.
[2] tpd is the same as tPLH and tPHL
[3] CPD is used to determine the dynamic power dissipation (PD in W). =CPD VCC2fi N+ (CL VCC2 fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of the outputs.
IOFF power-off
leakage current
VCC = 0 V; VIorVO =5.5V - 0.1 10 - 200 A
ICC supply current VI = 5.5 V or GND; IO = 0 A;
VCC= 1.65Vto 5.5 V 0.1 10 - 200 A
ICC additional
supply current
per pin; VCC = 2.3 V to 5.5 V; =VCC 0.6 V; IO =0 A 5 500 - 5000 A input
capacitance
VCC =3.3 V; VI = GND to VCC -5 - - - pF
Table 7. Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground=0V).
Table 8. Dynamic characteristics

Voltages are referenced to GND (ground=0 V); for load circuit see Figure9.
tpd propagation delay A, B to Y; see Figure8 [2]
VCC = 1.65 V to 1.95 V 1.0 3.7 9.9 1.0 13.0 ns
VCC = 2.3 V to 2.7 V 0.5 2.5 5.5 0.5 7.0 ns
VCC = 2.7 V 0.5 2.8 5.8 0.5 7.5 ns
VCC = 3.0 V to 3.6 V 0.5 2.3 5.0 0.5 6.5 ns
VCC = 4.5 V to 5.5 V 0.5 1.9 4.0 0.5 5.5 ns
CPD power dissipation
capacitance =GND to VCC [3]
VCC = 3.3 V - 25 - - - pF
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate
12. Waveforms

Table 9. Measurement points

1.65 V to 1.95V 0.5VCC 0.5VCC
2.3 V to 2.7V 0.5VCC 0.5VCC
2.7V 1.5V 1.5V
3.0V to 3.6V 1.5V 1.5V
4.5 V to 5.5V 0.5VCC 0.5VCC
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate

Table 10. Test data

1.65 V to 1.95V VCC  2.0ns 30pF 1k open
2.3 V to 2.7V VCC  2.0ns 30pF 500 open
2.7V 2.7V  2.5ns 50pF 500 open
3.0V to 3.6V 2.7V  2.5ns 50pF 500 open
4.5 V to 5.5V VCC  2.5ns 50pF 500 open
NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate
13. Package outline

NXP Semiconductors 74LVC1G86
2-input EXCLUSIVE-OR gate

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