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74VHCT00AMSTN/a1150avaiQUAD 2-INPUT NAND GATE
74VHCT00AMTRSTN/a2500avaiQUAD 2-INPUT NAND GATE
74VHCT00ATTRSTN/a2500avaiQUAD 2-INPUT NAND GATE


74VHCT00AMTR ,QUAD 2-INPUT NAND GATEABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +7.0 VCCV DC Input ..
74VHCT00AMX ,Quad 2-Input NAND GateFeaturesThe VHCT00A is an advanced high-speed CMOS 2-Input High speed: t

74VHCT00AM-74VHCT00AMTR-74VHCT00ATTR
QUAD 2-INPUT NAND GATE
1/8June 2001 HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION:CC = 2 μA (MAX.) at TA =25°C COMPATIBLE WITH TTL OUTPUTS:
VIH = 2V (MIN.), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS
& OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE:OH | = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: PLH ≅ t PHL OPERATING VOLTAGE RANGE:
VCC(OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (MAX.)
DESCRIPTION

The 74VHCT00A is an advanced high-speed
CMOS QUAD 2-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C2 MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V since all
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHCT00A

QUAD 2-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
74VHCT00A
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) VCC = 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS

1) VCC = 0V
2) High or Low State
3) VIN from 0.8V to 2V
74VHCT00A
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)

(*) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
74VHCT00A
4/8
DYNAMIC SWITCHING CHARACTERISTICS

1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold
(VIHD), f=1MHz.
TEST CIRCUIT

CL =15/50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
74VHCT00A
5/8
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

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