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74LVC07ABQNXPN/a12660avaiHex buffer with open-drain outputs
74LVC07ADN/a112100avaiHex buffer with open-drain outputs
74LVC07APWNXP N/a16596avaiHex buffer with open-drain outputs


74LVC07AD ,Hex buffer with open-drain outputsLogic diagram for one gate5. Pinning information5.1 Pinning 74LVC07A74LVC07Aterminal 11A 1 14 VCC i ..
74LVC07APW ,Hex buffer with open-drain outputsFunctional description [1]Table 3. Function selectionInput OutputnA nYLLHZ[1] H = HIGH voltage leve ..
74LVC08A ,QUADRUPLE 2-INPUT AND GATESapplications.

74LVC07ABQ-74LVC07AD-74LVC07APW
Hex buffer with open-drain outputs
1. General description
The 74LVC07A provides six non-inverting buffers. The outputs are open-drain and can be
connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH
wired-AND functions.
Inputs can be driven from either 3.3 Vor5 V devices. This feature allows the use of these
devices as translators in mixed 3.3 V and5 V applications.
2. Features and benefits
5 V tolerant inputs and outputs (open-drain) for interfacing with 5 V logic Wide supply voltage range from 1.2 V to 5.5V CMOS low power consumption Direct interface with TTL levels Inputs accept voltages up to 5V Complies with JEDEC standard: JESD8-7A (1.65Vto 1.95V) JESD8-5A (2.3Vto 2.7V) JESD8-C/JESD36 (2.7Vto 3.6V) ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-B exceeds 200V CDM JESD22-C101E exceeds 1000V Specified from 40 C to +85C and 40 C to +125C
3. Ordering information

74L VC07A
Hex buffer with open-drain outputs
Rev. 5 — 27 October 2011 Product data sheet
Table 1. Ordering information

74LVC07AD 40 Cto +125C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
SOT108-1
74LVC07APW 40 Cto +125C TSSOP14 plastic thin small outline package; 14 leads; body width 4.4 mm SOT402-1
74LVC07ABQ 40 Cto +125C DHVQFN14 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals;
body 2.53 0.85 mm
SOT762-1
NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs
4. Functional diagram

5. Pinning information
5.1 Pinning

NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs
5.2 Pin description

6. Functional description

[1] H= HIGH voltage level; L= LOW voltage level; Z = high-impedance OFF-state
7. Limiting values

[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 C derate linearly with 8 mW/K.
For TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derates linearly with 4.5 mW/K.
Table 2. Pin description

1A, 2A, 3A, 4A, 5A, 6A 1, 3, 5, 9, 11, 13 data input , 2Y, 3Y, 4Y, 5Y, 6Y 2, 4, 6, 8, 10, 12 data output
GND 7 ground (0V)
VCC 14 supply voltage
Table 3. Function selection[1]

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO < 0 V 50 - mA output voltage active mode [2] 0.5 +6.5 V
high-impedance mode [2] 0.5 +6.5 V output current VO = 0 V to VCC -50 mA
ICC supply current - 100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125 C [3]- 500 mW
Tstg storage temperature 65 +150 C
NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs
8. Recommended operating conditions

9. Static characteristics

Table 5. Recommended operating conditions

VCC supply voltage 1.65 - 5.5 V
functional 1.2 - - V input voltage 0 - 5.5 V output voltage active mode 0 - VCC V
high-impedance mode 0 - 5.5 V
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall
rate
VCC = 1.65 V to 2.7 V 0 - 20 ns/V
VCC = 2.7 V to 5.5 V 0 - 10 ns/V
Table 6. Static characteristics

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
VIH HIGH-level
input voltage
VCC = 1.2 V 1.08 - - 1.08 - V
VCC = 1.65 V to 1.95 V 0.65  VCC- - 0.65  VCC -V
VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V
VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V
VCC = 4.5 V to 5.5 V 0.7  VCC - - 0.7  VCC -V
VIL LOW-level input
voltage
VCC = 1.2 V - - 0.12 - 0.12 V
VCC = 1.65 V to 1.95 V - - 0.35  VCC -0.35  VCCV
VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.30  VCC -0.30  VCCV
VOL LOW-level
output voltage =VIHorVIL= 100 A;
VCC= 1.65Vto 5.5 V - 0.20 - 0.3 V =4mA; VCC = 1.65 V - - 0.45 - 0.6 V =8mA; VCC = 2.3V - - 0.3 - 0.75 V =12mA; VCC = 2.7 V - - 0.4 - 0.6 V =24mA; VCC = 3.0 V - - 0.55 - 0.8 V =32mA; VCC = 4.5 V - - 0.55 - 0.8 V input leakage
current =5.5 VorGND;
VCC= 1.65 Vto 5.5 V 0.1 5- 20 A
IOZ OFF-state
output current =VIH; VO = 5.5 V or GND;
VCC= 1.65 V to 5.5 V 0.1 10 - 20 A
IOFF power-off
leakage currentorVO= 5.5 V; VCC =0V - 0.1 10 - 20 A
NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs

[1] All typical values are measured at VCC=3.3 V (unless stated otherwise) and Tamb =25C.
10. Dynamic characteristics

[1] Typical values are measured at Tamb =25 C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fi N+ (CL VCC2fo) where: = input frequency in MHz; fo= output frequency in MHz= output load capacitance inpF
VCC= supply voltage in Volts= number of inputs switching
(CL VCC2fo)= sum of the outputs
ICC supply current VI =VCCor GND; IO =0A;
VCC = 5.5 V
-0.1 10 -40 A
ICC additional
supply current
per input pin; =VCC 0.6 V; IO =0A;
VCC= 2.7Vto 5.5 V 5 500 - 5000 A input
capacitance
VCC= 0 V to 5.5V; =GNDto VCC 5.0 -- -pF
Table 6. Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Table 7. Dynamic characteristics

Voltages are referenced to GND (ground=0 V). For test circuit see Figure7.
tPZL OFF-state to LOW
propagation delayto nY; see Figure6
VCC = 1.2 V - 8.0 - - - ns
VCC = 1.65 V to 1.95 V 0.5 1.7 5.5 0.5 6.5 ns
VCC = 2.3 V to 2.7 V 0.5 1.2 2.8 0.5 3.5 ns
VCC = 2.7 V 0.5 1.8 3.3 0.5 4.5 ns
VCC = 3.0 V to 3.6 V 0.5 1.2 3.6 0.5 4.5 ns
VCC = 4.5 V to 5.5 V 0.5 1.6 2.6 0.5 3.5 ns
tPLZ LOW to OFF-state
propagation delayto nY; see Figure6
VCC = 1.2 V - 10 - - - ns
VCC = 1.65 V to 1.95 V 0.5 3.0 5.5 0.5 6.5 ns
VCC = 2.3 V to 2.7 V 0.5 1.7 2.8 0.5 3.5 ns
VCC = 2.7 V 0.5 2.1 3.3 0.5 4.5 ns
VCC = 3.0 V to 3.6 V 0.5 2.5 3.6 0.5 4.5 ns
VCC = 4.5 V to 5.5 V 0.5 1.6 2.6 0.5 3.5 ns
CPD power dissipation
capacitance
per buffer; VI =GNDto VCC [2]
VCC = 1.65 V to 1.95 V - 6.5 - - - pF
VCC = 2.3 V to 2.7 V - 6.9 - - - pF
VCC = 3.0 V to 3.6 V - 7.2 - - - pF
NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs
11. Waveforms

Table 8. Measurement points

< 2.7V 0.5 VCC VOL +0.15V
 2.7 Vto 3.6V 1.5V VOL +0.3V
 4.5 Vto 5.5V 0.5 VCC VOL +0.3V
NXP Semiconductors 74L VC07A
Hex buffer with open-drain outputs

Table 9. Test data

1.2V VCC  2 ns 30pF 1 k open 2  VCC GND
1.65Vto 1.95V VCC  2 ns 30pF 1 k open 2  VCC GND
2.3Vto 2.7V VCC  2 ns 30pF 500 open 2  VCC GND
2.7V 2.7V  2.5ns 50pF 500 open 2  VCC GND
3.0Vto 3.6V 2.7V  2.5ns 50pF 500 open 2  VCC GND
4.5Vto 5.5V VCC  2.5ns 50pF 500 open 2  VCC GND
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