74HC1G00GV ,2-input NAND gateFeatures and benefits Wide supply voltage range from 2.0 V to 6.0 V Input levels: For 74HC1G00: ..
74HC1G00GW ,2-input NAND gateFEATURES QUICK REFERENCE DATAGND = 0 V; T =25 °C; t =t ≤ 6.0 nsamb r f• Wide operating voltage:2.0 ..
74HC1G00GW ,2-input NAND gateINTEGRATED CIRCUITSDATA SHEET74HC1G00; 74HCT1G002-input NAND gate1998 Jul 30Product specificationFil ..
74HC1G00GW ,2-input NAND gateGeneral descriptionThe 74HC1G00; 74HCT1G00 is a single 2-input NAND gate. Inputs include clamp diod ..
74HC1G02GV ,74HC1G02; 74HCT1G02; 2-input NOR gateFeaturesn Symmetrical output impedancen High noise immunityn Low power dissipationn Balanced propag ..
74HC1G02GW ,2-input NOR gateGeneral description74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a2-inpu ..
74LVC1G08GF ,Single 2-input AND gateFeatures and benefits Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complie ..
74LVC1G08GM ,Single 2-input AND gatePin configuration SOT353-1 and SOT753 Fig 5.
74LVC1G08GV ,Single 2-input AND gatePin configuration SOT886 74LVC1G0874LVC1G08B 1 5 VCCB 1 6 VCC3GNDA 2 5 n.c.A 2 4 YGND 3 4 Y001aae97 ..
74LVC1G08GW ,Single 2-input AND gatePin configuration SOT891, SOT1115 and Fig 7.
74LVC1G08W5-7 , SINGLE 2 INPUT POSITIVE AND GATE
74LVC1G10DW-7 , SINGLE 3 INPUT POSITIVE NAND GATE
74HC1G00GV -74HC1G00GW-74HCT1G00GV
2-input NAND gate
1. General descriptionThe 74HC1G00; 74HCT1G00 is a single 2-input NAND gate. Inputs include clamp diodes
that enable the use of current limiting resistors to interface inputs to voltages in excess of
VCC.
2. Features and benefits Wide supply voltage range from 2.0 Vto 6.0V Input levels: For 74HC1G00: CMOS level For 74HCT1G00: TTL level Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays ESD protection: HBM JESD22-A114E exceeds 2000V MM JESD22-A115-A exceeds 200V Multiple package options Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
74HC1G00; 74HCT1G00
2-input NAND gate
Rev. 5 — 25 September 2013 Product data sheet
Table 1. Ordering information74HC1G00GW 40 C to +125C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74HCT1G00GW
74HC1G00GV 40 C to +125C SC-74A plastic surface-mounted package; 5 leads SOT753
74HCT1G00GV
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
4. Marking[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
6. Pinning information
6.1 Pinning
6.2 Pin description
Table 2. Marking codes74HC1G00GW HA
74HCT1G00GW TA
74HC1G00GV H00
74HCT1G00GV T00
Table 3. Pin description 1 data input 2 data input
GND 3 ground (0 V) 4 data output
VCC 5 supply voltage
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
7. Functional description
8. Limiting values[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Above 55 C, the value of Ptot derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 4. Function tableH = HIGH voltage level; L = LOW voltage level
LLH H H
HHL
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). [1]
VCC supply voltage 0.5 +7.0 V
IIK input clamping current VI < 0.5 V or VI >VCC + 0.5V - 20 mA
IOK output clamping current VO< 0.5 V or VO >VCC + 0.5V - 20 mA output current 0.5 V < VO
ICC supply current - 25 mA
IGND ground current 25 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb = 40Cto +125 C [2]- 200 mW
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 - VCC 0- VCC V output voltage 0 - VCC 0- VCC V
Tamb ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise
and fall rate
VCC = 2.0 V - - 625 - - - ns/V
VCC = 4.5 V - - 139 - - 139 ns/V
VCC = 6.0 V - - 83 - - - ns/V
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
10. Static characteristicsTable 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 C.
For type 74HC1G00
VIH HIGH-level input
voltage
VCC = 2.0 V 1.5 1.2 - 1.5 - V
VCC = 4.5 V 3.15 2.4 - 3.15 - V
VCC = 6.0 V 4.2 3.2 - 4.2 - V
VIL LOW-level input
voltage
VCC = 2.0 V - 0.8 0.5 - 0.5 V
VCC = 4.5 V - 2.1 1.35 - 1.35 V
VCC = 6.0 V - 2.8 1.8 - 1.8 V
VOH HIGH-level output
voltage = VIH or VIL = 20 A; VCC= 2.0V 1.9 2.0 - 1.9 - V = 20 A; VCC= 4.5V 4.4 4.5 - 4.4 - V = 20 A; VCC= 6.0V 5.9 6.0 - 5.9 - V = 2.0 mA; VCC=4.5V 4.13 4.32 - 3.7 - V = 2.6 mA; VCC=6.0V 5.63 5.81 - 5.2 - V
VOL LOW-level output
voltage = VIH or VIL = 20 A; VCC= 2.0V - 0 0.1 - 0.1 V = 20 A; VCC= 4.5V - 0 0.1 - 0.1 V = 20 A; VCC= 6.0V - 0 0.1 - 0.1 V = 2.0 mA; VCC= 4.5V - 0.15 0.33 - 0.4 V = 2.6 mA; VCC= 6.0V - 0.16 0.33 - 0.4 V input leakage current VI =VCCor GND; VCC= 6.0V - - 1.0 - 1.0 A
ICC supply current VI =VCCor GND; IO =0A;
VCC =6.0V 10 - 20 A input capacitance - 1.5 - - - pF
For type 74HCT1G00
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
VIL LOW-level input
voltage
VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
VOH HIGH-level output
voltage = VIH or VIL = 20 A; VCC= 4.5V 4.4 4.5 - 4.4 - V = 2.0 mA; VCC=4.5V 4.13 4.32 - 3.7 - V
VOL LOW-level output
voltage = VIH or VIL = 20 A; VCC= 4.5V - 0 0.1 - 0.1 V = 2.0 mA; VCC= 4.5V - 0.15 0.33 - 0.4 V input leakage current VI =VCCor GND; VCC= 5.5V - - 1.0 - 1.0 A
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (W). =CPD VCC2fi+(CL VCC2 fo)where:= input frequency in MHz; fo= output frequency in MHz= output load capacitance in pF
VCC= supply voltage in Volts(CL VCC2 fo) = sum of outputs
ICC supply current VI =VCCor GND; IO =0A;
VCC =5.5V 10 - 20 A
ICC additional supply
current
per input; VCC= 4.5Vto 5.5V; =VCC 2.1 V; IO =0A - 500 - 850 A input capacitance - 1.5 - - - pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 C.
Table 8. Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb =25 C. For test circuit, see Figure6
For type 74HC1G00
tpd propagation delayA and B to Y; see Figure5 [1]
VCC = 2.0 V; CL=50pF - 25 115 - 135 ns
VCC = 4.5 V; CL =50pF - 9 23 - 27 ns
VCC = 5.0 V; CL =15pF - 7 - - - ns
VCC = 6.0 V; CL =50pF - 8 20 - 23 ns
CPD power dissipation
capacitance =GNDto VCC [2] -19 - - - pF
For type 74HCT1G00
tpd propagation delay A and B to Y; see Figure5 [1]
VCC = 4.5 V; CL =50pF - 12 24 - 27 ns
VCC = 5.0 V; CL =15pF - 10 - - - ns
CPD power dissipation
capacitance =GNDto VCC 1.5V [2] -21 - - - pF
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
12. Waveforms
