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74AHC1G66GVNXPN/a58820avaiSingle-pole single-throw analog switch
74AHC1G66GWNXPN/a42000avaiSingle-pole single-throw analog switch


74AHC1G66GV ,Single-pole single-throw analog switchFeaturesn Very low ON resistance:u 26 Ω (typ.) at V = 3.0 VCCu 16 Ω (typ.) at V = 4.5 VCCu 14 Ω (ty ..
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74AHC1G66GV-74AHC1G66GW
Single-pole single-throw analog switch
General description74AHC1G66 and 74AHCT1G66 are high-speed Si-gate CMOS devices. They are
single-pole single-throw analog switches. The switch has two input/output pins (Y andZ)
and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned
off. Features Very low ON resistance: 26 Ω (typ.)at VCC= 3.0V 16 Ω (typ.)at VCC= 4.5V 14 Ω (typ.)at VCC= 5.5V High noise immunity Low power dissipation Balanced propagation delays Multiple package options ESD protection: HMB JESD22-A114E exceeds 2000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101C exceeds 1000 V Specified from −40 °Cto+85 °C and −40°Cto +125°C Ordering information
74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
Rev. 04 — 18 December 2008 Product data sheet
Table 1. Ordering information

74AHC1G66GW −40 °C to +125°C TSSOP5 plastic thin shrink small outline package; leads; body width 1.25 mm
SOT353-1
74AHCT1G66GW
74AHC1G66GV −40 °C to +125°C SC-74A plastic surface-mounted package; 5 leads SOT753
74AHCT1G66GV
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch Marking Functional diagram Pinning information
6.1 Pinning
Table 2. Marking codes

74AHC1G66GW AL
74AHCT1G66GW CL
74AHC1G66GV A66
74AHCT1G66GV C66
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
6.2 Pin description Functional description

[1]H= HIGH voltage level; L= LOW voltage level. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output voltage ratings are observed.
[2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. Recommended operating conditions
Table 3. Pin description
1 independent input or output 2 independent input or output
GND 3 ground (0 V) 4 enable input (active HIGH)
VCC 5 supply voltage
Table 4. Function table[1]
OFF
HON
Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5V [1] −20 - mA
ISK switch clamping current VI < −0.5 V or VI >VCC + 0.5 V [1]- ±20 mA
ISW switch current −0.5 V < VO < VCC+ 0.5 V - ±25 mA
ICC supply current - 75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb = −40°Cto +125°C [2]- 250 mW
Table 6. Recommended operating conditions

Voltages are referenced to GND (ground = 0 V).[1]
VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V
VSW switch voltage 0 - VCC 0- VCC V
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch

[1] To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not
exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage
drop across the switch, but the voltage at pins Yand Z may not exceed VCC or GND.
[2] Applies to control signal levels.
10. Static characteristics

Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C
Δt/ΔV inputtransitionrise and
fall rate
VCC = 3.3 ± 0.3V [2] - - 100 - - - ns/V
VCC = 5.0 ± 0.5V [2] - - 20 - - 20 ns/V
Table 6. Recommended operating conditions …continued

Voltages are referenced to GND (ground = 0 V).[1]
Table 7. Static characteristics

Voltages are referenced to GND (ground = 0 V).
74AHC1G66

VIH HIGH-level
input voltage
VCC = 2.0 V 1.5 - - 1.5 - 1.5 - V
VCC = 3.0 V 2.1 - - 2.1 - 2.1 - V
VCC = 5.5 V 3.85 - - 3.85 - 3.85 - V
VIL LOW-level
input voltage
VCC = 2.0 V - - 0.5 - 0.5 - 0.5 V
VCC = 3.0 V - - 0.9 - 0.9 - 0.9 V
VCC = 5.5 V - - 1.65 - 1.65 - 1.65 V input leakage
current= 5.5Vor GND;
VCC= 5.5V - 0.1 - 1.0 - 2.0 μA
IS(OFF) OFF-state
leakage
current
Y or Z; VCC= 5.5V;
see Figure4 - 0.1 - 1.0 - 4.0 μA
IS(ON) ON-state
leakage
current
Y or Z; VCC = 5.5 V;
see Figure5 - 0.1 - 1.0 - 4.0 μA
ICC supply current E, Y or Z= VCCor GND;
VCC= 5.5 V - 1.0 - 10 - 40 μA input
capacitance
E input - 2.0 10 - 10 - 10 pF
CS(ON) ON-state
capacitance
Y or Z input or output - 4.0 10 - 10 - 10 pF
74AHCT1G66

VIH HIGH-level
input voltage
VCC = 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V input leakage
current= 5.5Vor GND;
VCC= 5.5V - 0.1 - 1.0 - 2.0 μA
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
10.1 Test circuits

IS(OFF) OFF-state
leakage
current
Y or Z; VCC= 5.5V;
see Figure4 - 0.1 - 1.0 - 4.0 μA
IS(ON) ON-state
leakage
current
Y or Z; VCC = 5.5 V;
see Figure5 - 0.1 - 1.0 - 4.0 μA
ICC supply current E, Y or Z= VCCor GND;
VCC= 5.5 V - 1.0 - 10 - 40 μA
ΔICC additional
supply current
per input pin; VI= 3.4V;
other inputs at VCCor GND;= 0 A; VCC = 5.5 V - 1.35 - 1.5 - 1.5 mA input
capacitance
E input - 2.0 10 - 10 - 10 pF
CS(ON) ON-state
capacitance
Y or Z input or output - 4.0 10 - 10 - 10 pF
Table 7. Static characteristics …continued

Voltages are referenced to GND (ground = 0 V).
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
10.2 ON resistance

[1] At supply voltages approaching 2 V, the analog switch ON resistance becomes extremely non-linear. Therefore it is recommended that
these devices be used to transmit digital signals only, when using this supply voltage.
10.3 ON resistance test circuit and graphs
Table 8. ON resistance

At recommended operating conditions; voltages are referenced to GND (ground0 V); for graph see Figure7[1]
74AHC1G66 and 74AHCT1G66

RON(peak) ON resistance
(peak) =VCC to GND; see Figure6
ISW= 1.0 mA; VCC= 2.0V 148[1] -- - Ω
ISW=10 mA; VCC= 3.0Vto 3.6V 28 50 70 110 Ω
ISW=10 mA; VCC= 4.5Vto 5.5V 15 30 40 60 Ω
RON(rail) ON resistance
(rail)= GND; see Figure6
ISW= 1.0 mA; VCC= 2.0V 30 - - - Ω
ISW=10 mA; VCC= 3.0Vto 3.6V 20 50 65 90 Ω
ISW=10 mA; VCC= 4.5Vto 5.5V 15 22 26 40 Ω =VCC; see Figure6
ISW= 1.0 mA; VCC= 2.0V 28 - - - Ω
ISW=10 mA; VCC= 3.0Vto 3.6V 18 50 65 90 Ω
ISW=10 mA; VCC= 4.5Vto 5.5V 13 22 26 40 Ω
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
11. Dynamic characteristics
Table 9. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V);CL=50 pF; unless otherwise specified; For test circuit see Figure 10.
74AHC1G66

tpd propagation
delayto Z or Zto Y; see Figure8 [2]
VCC = 2.0 V 2.2 5.0 6.0 7.0 ns
VCC = 3.0 V to 3.6V 1.0 2.0 3.0 4.0 ns
VCC = 4.5 V to 5.5V 0.6 1.0 2.0 3.0 ns
ten enable time Eto Y or Z; see Figure9 [2]
VCC = 2.0 V; CL=15pF 7.0 25.0 33.0 40.0 ns
VCC = 2.0 V 11.0 35.0 46.0 57.0 ns
VCC = 3.0 V to 3.6V; =15pF
4.0 11.0 14.0 18.0 ns
VCC = 3.0 V to 3.6V 5.8 15.0 20.0 25.0 ns
VCC = 4.5 V to 5.5V; =15pF
3.0 8.0 10.0 13.0 ns
VCC = 4.5 V to 5.5V 4.0 11.0 13.0 17.0 ns
tdis disable time Eto Y or Z; see Figure9 [2]
VCC = 2.0 V; CL=15pF 9.0 25.0 33.0 40.0 ns
VCC = 2.0 V 13.0 35.0 46.0 57.0 ns
VCC = 3.0 V to 3.6V; =15pF
6.0 11.0 14.0 18.0 ns
VCC = 3.0 V to 3.6V 8.4 15.0 20.0 25.0 ns
VCC = 4.5 V to 5.5V; =15pF
5.0 8.0 10.0 13.0 ns
VCC = 4.5 V to 5.5V 6.1 11.0 13.0 17.0 ns
CPD power
dissipation
capacitance= GNDto VCC [3] 13 - - - pF
74AHCT1G66

tpd propagation
delayto Z or Zto Y; see Figure8 [2]
VCC = 4.5 V to 5.5 V 0.7 1.0 2.0 3.0 ns
ten enable time Eto Y or Z; see Figure9 [2]
VCC = 4.5 V to 5.5 V; =15pF
3.0 7.0 10.0 13.0 ns
VCC = 4.5 V to 5.5 V 4.7 10.0 13.0 17.0 ns
tdis disable time Eto Y or Z; see Figure9 [2]
VCC= 4.5 V to 5.5 V; =15pF
5.0 8.0 10.0 13.0 ns
VCC= 4.5 V to 5.5 V 6.5 11.0 13.0 17.0 ns
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch

[1] All typical values are measured at VCC = 2.0 V, VCC = 3.3 V, VCC = 5.0 V and Tamb =25°C.
[2] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3] CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi+Σ ((CL × CSW)× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
CSW= maximum switch capacitance in pF (see Table7);
VCC= supply voltage in Volt;
Σ ((CL × CSW) × VCC2 × fo) = sum of outputs.
11.1 Waveforms and test circuit

CPD power
dissipation
capacitance= GNDto VCC [3] 15 - - - pF
Table 9. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V);CL=50 pF; unless otherwise specified; For test circuit see Figure 10.
NXP Semiconductors 74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
Table 10. Measurement points

74AHC1G66 0.5VCC 0.5VCC VOL + 0.3V VOH − 0.3V
74AHCT1G66 1.5V 1.5V VOL + 0.3V VOH − 0.3V
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