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7413IRFN/a30000avaiPower MOSFET(Vdss=30V/ Id=12A)


7413 ,Power MOSFET(Vdss=30V/ Id=12A)ApplicationsDSS DS(on) D High frequency DC-DC converters30V 11@V = 10V 12A GSBenefitsAA Low Gate ..
74153 ,Dual 4-Line to 1-Line Data Selectors/Multiplexers54153/DM54153/DM74153Dual4-Lineto1-LineDataSelectors/MultiplexersJune198954153/DM54153/DM74153Dual4 ..
74157 ,Quad 2-Line to 1-Line Data Selectors/MultiplexersFeaturesYBuffered inputs and outputsThese data selectors/multiplexers contain inverters andYdrivers ..
74161PC ,V(cc): +5V; synchronous presettable binary counter
74162 , SYNCHRONOUS 4-BIT COUNTERS
74163DC ,V(cc): +5V; synchronous presettable binary counter
74F533 ,Octal Transparent Latch with 3-STATE OutputsFeaturesYEight latches in a single packageThe’F533consistsofeightlatcheswithTRI-STATEoutputsYfor bu ..
74F533PC ,Octal Transparent Latch with 3-STATE OutputsFunctional DescriptionThe 74F533 contains eight D-type latches with 3-STATEInputs Outputoutput buff ..
74F533SJ ,Octal Transparent Latch with TRI-STATE OutputsFeaturesThe 74F533 consists of eight latches with 3-STATE outputs

7413
Power MOSFET(Vdss=30V/ Id=12A)
International
TOR Rectifier
Applications
q High frequency DC-DC converters
SMPS MOSFET
PD- 91330F
IRF7413
HEXFET© Power MOSFET
RDS(on) max(mf2)
11@Vss=10V
Benefits
. Low Gate to Drain Charge to Reduce a M D
Switching Losses 7
o Fully Characterized Capacitance Including E D
Effective Cogs to Simplify Design, (See 6-_LL D
App. Note AN1001) 5TH D
o Fully Characterized Avalanche Voltage
and Current Top View SO-tl
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70''C Continuous Drain Current, VGS @ 10V 9.6 A
G, Pulsed Drain Current C) 96
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGs Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt © 1.0 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
RBJL Junction-to-Drain Lead - 20
' Junction-to-Ambient © - 50 °C/W
Notes co through © are on page 8
1
3/19/02
IRF7413
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.03 - Vl°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 11 mn VGS = 10V, ID = 7.2A ©
- 18 N/ss = 4.5V, ID = 6.0A
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = Was, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, VGS = 0V
- - 25 Vos = 24V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 16 - - S Ws = 10V, ID = 7.2A
% Total Gate Charge - 44 66 ID = 7.2A
Qgs Gate-to-Source Charge - 7.9 - nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 9.2 - VGS = 10V,
tdwn) Turn-On Delay Time - 8.8 - VDD = 100V
tr Rise Time - 8.0 - ns ID = 7.2A
tum) Turn-Off Delay Time - 35 - Rs = 6.29
tf Fall Time - 14 - l/ss = 10V ©
Ciss Input Capacitance - 1670 - l/ss = 0V
Coss Output Capacitance - 670 - l/os = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Coss Output Capacitance - 2290 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
C055 Output Capacitance - 680 - l/ss = 0V, Ws = 24V, f = 1.0MHz
CDSS eff. Effective Output Capacitance - 1020 - Ves = 0V, Vros = 0V to 24V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 120 mJ
IAR Avalanche Current© - 7.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 96 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 7.2A, VGS = 0V ©
trr Reverse Recovery Time - 50 75 ns To = 25°C, IF = 7.2A
Qrr Reverse RecoveryCharge - 74 110 nC di/dt = 100A/ps ©
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