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2SK810 Fast Delivery,Good Price
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2SK810NECN/a100avaiFAST SWITCHING N-CHANNEL SILICON POWER MOS FET


2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC :ii)..ji-i.-:i.;..'ii,.i,ii'i.)./,..'. "r"). DEVICE th y..,.,.:..::: ..
2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr .. - . .. -. --.-..-------------.-.----.- -- ..
2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374! "16 DEIEHE‘?525 DULB‘IWI El r t tr/-IE'C') ..
2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures IUrtittmml . " . ' . IosMAx 1.tMA.X " Suitable for switching pouer suppIIes, t.ttr.t . ..
2SK819 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET6427525 N E c ELECTRONICS INC 980 18986 D 7237.3 =Ie. DE ELIE?525 UDLEHBE i, r Nag ELELTRUN ..
2SK825 ,FAST SWITCHING N-CHANNEL SILICON POWER MOSFET=15 DE Iguanas ClirldhnT? D r 6427525 N E C ELECTRONICS INC 980 13997 ._..’-. . . ''. e" .- .._ ..
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES 5% Small and Surface Mount package. @ High junction temperature provides free applicatio ..
3P4J-Z ,3A mold thyristorFEATURES 5% Small and Surface Mount package. @ High junction temperature provides free applicatio ..
3P4MH ,3A mold SCRfeatures a small and lightweight package andis easy to handle even on the mounting surface due to i ..


2SK810

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