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2SK802NECN/a500avaiFast switching N-channel silicon MOS field effect power transistor.


2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG-- "37 3 6427525 N E C ELECTRONICS INC 930 18958 D Fr N E c ELECTRONICS INC =13 DEIg ..
2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC :ii)..ji-i.-:i.;..'ii,.i,ii'i.)./,..'. "r"). DEVICE th y..,.,.:..::: ..
2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr .. - . .. -. --.-..-------------.-.----.- -- ..
2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374! "16 DEIEHE‘?525 DULB‘IWI El r t tr/-IE'C') ..
2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures IUrtittmml . " . ' . IosMAx 1.tMA.X " Suitable for switching pouer suppIIes, t.ttr.t . ..
3N165 ,Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES 5% Small and Surface Mount package. @ High junction temperature provides free applicatio ..


2SK802

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