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2SK699 Fast Delivery,Good Price
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2SK699NECN/a5000avaiN CHANNEL MOS FIELD EFFECT POWER TRANSISTOR


2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M q Low R Sl ) A t0.334 MAX.) (0110 Ith ) D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty SYMBOL Maximum Temperatures Storage Temperature . . ..
2SK701 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SK703 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 EC) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
2SK705 ,N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty SYMBOL CHARACTERISTIC Drain to Source On-State TE ..
2SK711 ,Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier ApplicationsApplications  High |Y |: |Y | = 25 mS (typ.) fs fs Low C : C = 7.5 pF (typ.) iss iss Maximum ..
3LN03M ,Switching DeviceMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSS ..
3LN03SS ,Switching DeviceAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C-TB-E , General-Purpose Switching Device Applications
3LP01M ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01M-TL-E , General-Purpose Switching Device Applications


2SK699

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