| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK680A-T2 |
NEC|NEC |
N/a |
1089 |
 |
|
2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
tg-tTXT-iT-Terai';'.-',",',,". renagmmnwmun "mm. mgv'v te2'rrH'erF'Prrri""
MOS FIELD E ..
2SK684 , SILICON N-CHANNEL MOS FET
2SK690 ,Gallium Arsenide DevicesElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit1, 2*Drain curren ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
